SiC MOSFET - LSIC1MO120E - Littelfuse

Product Highlights > Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E Series

            Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E Series
                    Littelfuse offers the enhancement-mode SiC MOSFET, 1200 V, N-channel LSIC1MO120E series
    

Image of Littelfuse's Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E0080 Series Littelfuse's SiC MOSFET LSIC1MO120E series provides a combination of low on-resistance and ultra-low switching losses unavailable with traditional 1200 V class power transistors. The robust design of this first SiC MOSFET accommodates a wider range of high temperature applications. Smaller heat sinks and increased power density create a higher efficiency and smaller passive filter and increased power density create higher switching frequencies. The device has a smaller die size per voltage/current rating.

State of the SiC MOSFET: Device Evolution, Technology Merit, and Commercial Prospects

Features
Ultra-fast switching speeds Lower switching losses High temperature operation		High blocking voltages and low specific on-resistance (SiC material properties)
Applications
Power conversion systems Solar inverters Switch mode power supplies UPS systems		Motor drives High voltage DC/DC converters Battery chargers

Silicon Carbide (SiC) Ultra-Fast Switching MOSFET

	Billede	Manufacturer Part Number	Beskrivelse	Afladning til kildespænding (Vdss)	Strøm - Kontinuerlig afladning (Id) @ 25°C	Tilgængeligt antal	Pris	Vis detaljer
		LSIC1MO120E0080	SICFET N-CH 1200V 39A TO247-3	1200 V	39A (Tc)	359 - Immediate	$130.48	Vis detaljer
		LSIC1MO120E0160	SICFET N-CH 1200V 20A TO247-3	1200 V	20A (Tc)	22 - Immediate 1350 - Factory Stock	$70.37	Vis detaljer

Published: 2018-01-05

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