ROHM Semiconductor

SiC Schottky Barrier Diodes

ROHM’s ultra-low switching loss diodes are available in a variety of current ratings and packages

Image of ROHM SiC Schottky Barrier DiodeROHM offers silicon carbide (SiC) Schottky barrier diodes in a variety of current ratings and packages. Some features include low forward voltage drop, high peak current (IFSM) ratings, and low leakage. They are available with one or two diodes per package, and some AEC-Q101 qualified models are available for automotive use. The reverse recovery time (trr) is virtually constant, regardless of temperature (due primarily to device capacitance). It delivers much lower switching loss than silicon fast recovery diodes (SiFRDs).

Features
  • Ultra-fast recovery time
  • Maximum junction temperature: 175°C
  • Packaged devices rated for 650 V or 1200 V
  • Bare dies available up to 1700 V
  • SPICE and thermal models available
  • Continuous forward current ratings of 2 A, 4 A, 5 A, 6 A, 8 A, 10 A, 12 A, 15 A, 20 A, 30 A, and 40 A
  • 3rd generation with low VF
  • Operating temperature range: -40°C to +175°C
Applications
  • Power factor correction circuits
  • Secondary rectifiers
  • Automotive electronics

SiC Diodes

BilledeManufacturer Part NumberBeskrivelseSpænding - DC omvendt (Vr) (maks.)Tilgængeligt antal PrisVis detaljer
DIODE ARRAY SIC 1200V 10A TO-247SCS220KE2CDIODE ARRAY SIC 1200V 10A TO-2471200 V0 - Immediate$66.84Vis detaljer
DIODE ARRAY SIC 650V 20A TO-247SCS240AE2CDIODE ARRAY SIC 650V 20A TO-247650 V0 - Immediate$63.05Vis detaljer
DIODE ARRAY SIC 1200V 10A TO-247SCS120KE2CDIODE ARRAY SIC 1200V 10A TO-2471200 V0 - Immediate$169.31Vis detaljer
DIODE ARRAY SIC 600V 20A TO-247SCS140AE2CDIODE ARRAY SIC 600V 20A TO-247600 V0 - Immediate$236.23Vis detaljer
DIODE ARRAY SIC 650V 20A TO-247SCS210KE2HRCDIODE ARRAY SIC 650V 20A TO-247650 V0 - Immediate$42.81Vis detaljer

SiC Transistors

BilledeManufacturer Part NumberBeskrivelseFET-funktionalitetTilgængeligt antal PrisVis detaljer
MOSFET 2N-CH 1200V 120A MODULEBSM120D12P2C005MOSFET 2N-CH 1200V 120A MODULE-2 - Immediate$2,372.12Vis detaljer
MOSFET 2N-CH 1200V 180A MODULEBSM180D12P3C007MOSFET 2N-CH 1200V 180A MODULE-13 - Immediate$3,633.03Vis detaljer
MOSFET 2N-CH 1200V 300A MODULEBSM300D12P2E001MOSFET 2N-CH 1200V 300A MODULE-8 - Immediate$4,582.40Vis detaljer
MOSFET 2N-CH 1700V 250A MODULEBSM250D17P2E004MOSFET 2N-CH 1700V 250A MODULE-0 - Immediate$6,346.80Vis detaljer
MOSFET 2N-CH 1200V 80A MODULEBSM080D12P2C008MOSFET 2N-CH 1200V 80A MODULE-3 - Immediate$2,055.87Vis detaljer

Diodes - Rectifiers - Single

BilledeManufacturer Part NumberBeskrivelseSpænding - Fremløb (Vf) (maks.) @ IfHastighedOmvendt gendannelsestid (trr)Tilgængeligt antal PrisVis detaljer
DIODE SIL CARB 1200V 5A TO220ACSCS205KGCDIODE SIL CARB 1200V 5A TO220AC1.6 V @ 5 AIngen restitutionstid > 500mA (Io)0 ns0 - Immediate$15.00Vis detaljer
DIODE SIL CARB 1200V 5A TO220ACSCS205KGHRCDIODE SIL CARB 1200V 5A TO220AC1.6 V @ 5 AIngen restitutionstid > 500mA (Io)0 ns0 - Immediate$21.12Vis detaljer
DIODE SIL CARB 650V 6A TO220ACSCS206AGCDIODE SIL CARB 650V 6A TO220AC1.55 V @ 6 AIngen restitutionstid > 500mA (Io)0 ns0 - Immediate$9.98Vis detaljer
DIODE SIL CARB 650V 6A TO220ACSCS206AGHRCDIODE SIL CARB 650V 6A TO220AC1.55 V @ 6 AIngen restitutionstid > 500mA (Io)0 ns0 - Immediate$13.87Vis detaljer
DIODE SIL CARB 650V 6A TO263ABSCS206AJHRTLLDIODE SIL CARB 650V 6A TO263AB1.55 V @ 6 AIngen restitutionstid > 500mA (Io)0 ns746 - Immediate$40.18Vis detaljer

Diodes - Rectifiers - Arrays

BilledeManufacturer Part NumberBeskrivelseSpænding - Fremløb (Vf) (maks.) @ IfHastighedStrøm - Lækstrøm @ VrTilgængeligt antal PrisVis detaljer
DIODE ARRAY SIC 650V 20A TO-247SCS210KE2HRCDIODE ARRAY SIC 650V 20A TO-2471.55 V @ 20 AIngen restitutionstid > 500mA (Io)400 µA @ 600 V0 - Immediate$42.81Vis detaljer
DIODE ARRAY SIC 650V 10A TO-247SCS220AE2CDIODE ARRAY SIC 650V 10A TO-2471.55 V @ 10 AIngen restitutionstid > 500mA (Io)0 ns0 - Immediate$33.70Vis detaljer
DIODE ARRAY SIC 650V 10A TO-247SCS220AE2HRCDIODE ARRAY SIC 650V 10A TO-2471.55 V @ 10 AIngen restitutionstid > 500mA (Io)0 ns0 - Immediate$39.83Vis detaljer
DIODE ARRAY SIC 1200V 10A TO-247SCS220KE2CDIODE ARRAY SIC 1200V 10A TO-2471.6 V @ 10 AIngen restitutionstid > 500mA (Io)0 ns0 - Immediate$66.84Vis detaljer
DIODE ARRAY SIC 650V 10A TO-247SCS220KE2HRCDIODE ARRAY SIC 650V 10A TO-2471.55 V @ 10 AIngen restitutionstid > 500mA (Io)200 µA @ 600 V0 - Immediate$74.18Vis detaljer
Updated: 2020-04-22
Published: 2019-04-30

Related Videos

High accuracy current monitoring contributes to improved application reliability
High accuracy current monitoring contributes to improved application reliability

Publish Date: 2023-06-22

Midnite Solar's Inverters and Charger Systems
Midnite Solar's Inverters and Charger Systems

Publish Date: 2023-02-06

ROHM's SiC Power and Gate Driver Solutions
ROHM's SiC Power and Gate Driver Solutions

Publish Date: 2023-02-06

Related Product Highlight

Industrial Power Solutions ROHM’s reliable portfolio of power solutions includes a variety of applications within the industrial sector from SiC MOSFETs and gate drivers to IPMs and shunt resistors. Learn more at DigiKey today.
SiC Power MOSFETs ROHM’s silicon carbide (SiC) MOSFETs come in a variety of ON resistances and voltage (VDSS) ratings of 650 V, 1,200 V, or 1,700 V.
AEC-Q101 Silicon Carbide (SiC) Schottky Barrier Diodes ROHM Semiconductor's AEC-Q101 silicon carbide (SiC) Schottky barrier diodes are ideal for a variety of automotive applications.

Related Articles and Blogs

Halvledere med bredt båndgab transformerer transportverdenen Hele transportsektoren er under en radikal forandring med løsninger til el- og hybridbiler og renere massetransport.
Halvledere med bredt båndgab i rumfarts- og satellitanvendelser Halvledere med bredt båndgab giver adskillige fordele ved strømkonvertering, f.eks. øget effekttæthed og effektivitet samt mindre systemstørrelse og vægt.
How to Correctly Apply the Right Power Devices to Meet Industrial Power Supply Requirements By correctly applying the right power components for industrial power supplies and converters, designers can ensure the necessary performance and reliability.

Related Product Training Modules

High-Power Devices for EV DC Fast-Charging Stations ROHM's power device offerings for DC fast-charging stations include silicon carbide (SiC), insulated gate bipolar transistor (IGBT), and super junction MOSFETs.
Industrial Motor Products: Part 1 - Power Devices/Gate Drivers ROHM’s power devices and gate drivers are optimized for industrial motor end applications.
Silicon Carbide (SiC) Barrier Diodes Introducing Silicon Carbide advantages over silicon-based products, as well as an explanation of how their unique characteristics can benefit existing power solutions.