917-EPC2100ENG-ND

eGaN Integrated GaN Power

EPC

This presentation will discuss a family of eGaN products from Efficient Power Conversion – integrated half bridge products. Additionally, it will discuss the benefits of integration, review the current products available, and provide some actual results from tested application circuits. These monolithic GaN devices include the upper and lower FETs connected in a half bridge configuration and are faster, smaller, and more efficient than existing MOSFET or discrete GaN FET technology.

Related Parts

BilledeManufacturer Part NumberBeskrivelseTilgængeligt antal Pris
EVAL BOARD FOR EPC2100EPC9036EVAL BOARD FOR EPC21000 - ImmediateSee Page for PricingVis detaljer
EVAL BOARD FOR EPC2101EPC9037EVAL BOARD FOR EPC21010 - Immediate$1,265.09Vis detaljer
EVAL BOARD FOR EPC2102EPC9038EVAL BOARD FOR EPC210219 - Immediate$1,265.09Vis detaljer
EVAL BOARD FOR EPC2103EPC9039EVAL BOARD FOR EPC210315 - Immediate$761.66Vis detaljer
EVAL BOARD FOR EPC2104EPC9040EVAL BOARD FOR EPC210423 - Immediate$1,280.00Vis detaljer
EVAL BOARD FOR EPC2105EPC9041EVAL BOARD FOR EPC210511 - Immediate$761.66Vis detaljer
PTM Published on: 2015-06-19

Related Videos

EPC 2024 electronica interview: GaN and the future of untethered robots
EPC 2024 electronica interview: GaN and the future of untethered robots

Publish Date: 2025-01-29

Related Product Highlight

EPC2100 Transistors and EPC9036 Dev Board EPC's monolithic half-bridge devices save space, improve efficiency, and lower system costs.

Related Articles and Blogs

SiC and GaN Semiconductors Deliver for Power Electronics Wide bandgap SiC and GaN devices offer advanced power solutions.
Power GaN Products and Resources Available at DigiKey GaN is making inroads into power design. This blog provides some background and some relevant GaN products and resources now available at DigiKey.
Thermal Optimization of GaN HEMT Transistor Power Amplifiers GaN HEMT power amplifiers thermal optimization using self-heating large-signal model.