Wolfspeed

1,200 V Discrete Silicon Carbide MOSFETs

Wolfspeed 1,200 V discrete silicon carbide MOSFETs boost efficiency

Image of 1200 V Discrete Silicon Carbide MOSFETs Wolfspeed 1,200 V silicon carbide MOSFETs set the standard for performance, ruggedness, and ease of design-in. Extremely fast switching, ultra-low switching loss, and stable conduction loss over temperature assure significant improvement of system efficiency, power density, and overall BOM cost versus silicon MOSFET and IGBT incumbents. They are designed to optimize high-power applications such as uninterruptible power supplies (UPS), motor drives, switched-mode power supplies (SMPS), renewable energy, EV fast chargers, and more. 

Coupled with the 1,200 V SiC Schottky diodes, these MOSFETs create a powerful combination for higher efficiency in applications with strict requirements. Users can evaluate and optimize the high-speed dynamic switching performance of Wolfspeed SiC MOSFETs SpeedVal™ Kit Modular Evaluation Platform.

Features
  • Low RDS(ON) over temperature
  • Fast, rugged intrinsic silicon carbide body diode
  • High-temperature operation: TJ = +175°C
 
  • Available in package options with a separate Kelvin source pin
  • Reduction of heat-sink requirements
Applications
  • Energy storage
  • Solar inverters
  • EV on- and off-board chargers
 
  • UPS and motor drives
  • EV HVAC motor drives
  • Auxiliary power supplies

1,200 V Discrete Silicon Carbide MOSFETs

BilledeManufacturer Part NumberBeskrivelseFET-typeTeknologiAfladning til kildespænding (Vdss)Tilgængeligt antal PrisVis detaljer
SICFET N-CH 1200V 7.6A TO247-3C3M0350120DSICFET N-CH 1200V 7.6A TO247-3N-kanalSiCFET (siliciumcarbid)1200 V5 - Immediate$37.79Vis detaljer
SICFET N-CH 1200V 30A D2PAK-7C3M0075120JSICFET N-CH 1200V 30A D2PAK-7N-kanalSiCFET (siliciumcarbid)1200 V2422 - Immediate$56.12Vis detaljer
SICFET N-CH 1200V 30A TO263-7C3M0075120J-TRSICFET N-CH 1200V 30A TO263-7N-kanalSiCFET (siliciumcarbid)1200 V983 - Immediate$56.12Vis detaljer
SICFET N-CH 1200V 30A TO247-3C3M0075120DSICFET N-CH 1200V 30A TO247-3N-kanalSiCFET (siliciumcarbid)1200 V283 - Immediate$56.12Vis detaljer
SICFET N-CH 1200V 30A TO247-4LC3M0075120KSICFET N-CH 1200V 30A TO247-4LN-kanalSiCFET (siliciumcarbid)1200 V840 - Immediate$58.78Vis detaljer
1200V 40MOHM SIC MOSFETC3M0040120K1200V 40MOHM SIC MOSFETN-kanalSiCFET (siliciumcarbid)1200 V1384 - Immediate$91.39Vis detaljer
1200V 40 M SIC MOSFETC3M0040120J11200V 40 M SIC MOSFETN-kanalSiCFET (siliciumcarbid)1200 V181 - Immediate$76.66Vis detaljer
1200V 40MOHM SIC MOSFETC3M0040120D1200V 40MOHM SIC MOSFETN-kanalSiCFET (siliciumcarbid)1200 V710 - Immediate$76.66Vis detaljer
1200V 32MOHM SIC MOSFETC3M0032120J11200V 32MOHM SIC MOSFETN-kanalSiCFET (siliciumcarbid)1200 V253 - Immediate$83.80Vis detaljer
SICFET N-CH 1200V 63A TO247-4LC3M0032120KSICFET N-CH 1200V 63A TO247-4LN-kanalSiCFET (siliciumcarbid)1200 V137 - Immediate$83.80Vis detaljer
SIC, MOSFET, 21M, 1200V, TO-247-E3M0021120KSIC, MOSFET, 21M, 1200V, TO-247-N-kanalSiCFET (siliciumcarbid)1200 V536 - Immediate$118.37Vis detaljer
SICFET N-CH 1200V 100A TO247-4LC3M0021120KSICFET N-CH 1200V 100A TO247-4LN-kanalSiCFET (siliciumcarbid)1200 V2556 - Immediate$130.70Vis detaljer
SICFET N-CH 1200V 100A TO247-3C3M0021120DSICFET N-CH 1200V 100A TO247-3N-kanalSiCFET (siliciumcarbid)1200 V140 - Immediate$113.70Vis detaljer
SICFET N-CH 1200V 115A TO247-3C3M0016120DSICFET N-CH 1200V 115A TO247-3N-kanalSiCFET (siliciumcarbid)1200 V0 - ImmediateSee Page for PricingVis detaljer
SIC, MOSFET, 16M, 1200V, TO-247-E3M0016120KSIC, MOSFET, 16M, 1200V, TO-247-N-kanalSiCFET (siliciumcarbid)1200 V973 - Immediate$171.08Vis detaljer
SICFET N-CH 1.2KV 115A TO247-4C3M0016120KSICFET N-CH 1.2KV 115A TO247-4N-kanalSiCFET (siliciumcarbid)1200 V433 - Immediate$164.32Vis detaljer
SICFET N-CH 1200V 7.2A TO263-7C3M0350120JSICFET N-CH 1200V 7.2A TO263-7N-kanalSiCFET (siliciumcarbid)1200 V509 - Immediate$37.79Vis detaljer
SICFET N-CH 1200V 17A TO263-7C3M0160120JSICFET N-CH 1200V 17A TO263-7N-kanalSiCFET (siliciumcarbid)1200 V1364 - Immediate$46.14Vis detaljer
MOSFET N-CH 1200V 69A TO247-4LC3M0032120K1MOSFET N-CH 1200V 69A TO247-4LN-kanalSiCFET (siliciumcarbid)1200 V608 - Immediate$83.80Vis detaljer
1200V AUTOMOTIVE SIC 75MOHM FETE3M0075120D1200V AUTOMOTIVE SIC 75MOHM FETN-kanalSiCFET (siliciumcarbid)1200 V97 - Immediate$134.81Vis detaljer
Published: 2025-01-17

Related Videos

The Power to Make it Real™ – Our Purpose
The Power to Make it Real™ – Our Purpose

Publish Date: 2024-11-07

Simulate Solar Energy Systems with SpeedFit™ Design Simulator
Simulate Solar Energy Systems with SpeedFit™ Design Simulator

Publish Date: 2024-08-07

Quickly Designing Industrial Motor Drives with SiC using SpeedFit™ Design Simulator
Quickly Designing Industrial Motor Drives with SiC using SpeedFit™ Design Simulator

Publish Date: 2024-08-07

Related Product Highlight

Silicon Carbide (SiC) Solutions for Servo Drives The Wolfspeed portfolio of SiC MOSFETs, Schottky diodes, and power modules enables greater flexibility when designing with silicon carbide in servo drives.
Silicon Carbide Solutions for Industrial Low Voltage Motor Drives The Wolfspeed broad portfolio of SiC MOSFETs and Schottky diodes offers flexibility when designing efficient low-voltage motor drive solutions.
Silicon Carbide Solutions for Heat Pumps and Air Conditioners Wolfspeed silicon carbide solutions enable more efficient heat pumps and air conditioners with minimal redesign.

Related Articles and Blogs

Halvledere med bredt båndgab transformerer transportverdenen Hele transportsektoren er under en radikal forandring med løsninger til el- og hybridbiler og renere massetransport.
Halvledere med bredt båndgab i rumfarts- og satellitanvendelser Halvledere med bredt båndgab giver adskillige fordele ved strømkonvertering, f.eks. øget effekttæthed og effektivitet samt mindre systemstørrelse og vægt.
No Hype Here: SiC MOSFETs Are Very Real Although overshadowed by consumer electronics hype, SiC-based MOSFETs are quietly impacting power-related subsystem performance.