4th Generation 600 V Super Junction MOSFETs

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Product Highlights > 4th Generation 600 V Super Junction MOSFETs

            4th Generation 600 V Super Junction MOSFETs
                    Taiwan Semiconductor's NE series MOSFETs empower users to build smaller, faster, and more efficient systems
    

Taiwan Semiconductor’s 4th generation 600 V NE series super junction MOSFETs are designed to improve efficiency and power density in high voltage applications. The latest technology of the NE super junction MOSFET enables exceptionally low on-state resistance (R_ON) and low gate charge (Q_g) capacitance. The achievement of 30% figure-of-merit (FOM), R_ON Q_g, and improvement results in higher value in many HV applications versus alternative options. These super junction MOSFETs empower users to build smaller, faster, and more efficient systems.

Features

4th generation super junction technology
Q_g capacitance

Excellent switching performance
High gate noise immunity

Applications

Off-line switching power conversion
Server power supplies
HV motor drivers

UPS systems
Lighting controls