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SBR-Slide3

The SBR technology utilizes a MOSFET like structure to achieve low forward voltage loss, reduced high temperature reverse leakage, and fast switching, but without the required control of the gate voltage. The SBR diode removes the complexity of the gate voltage circuit by making a short contact between the gate and source(VGS=0) of the channel diode. To ensure that a weakly inverted channel still exists under the gate, the oxide thickness is reduced to an optimized level.

PTM Published on: 2011-10-27