Name: TK40E10N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK40E10N1S1X-ND
Price: 27.1875 DKK
Availability: InStock

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TK40E10N1,S1X
DigiKey Part Number	TK40E10N1S1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK40E10N1,S1X
Description	MOSFET N CH 100V 90A TO220
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 90A (Tc) 126W (Tc) Through Hole TO-220
Datasheet	Datasheet
EDA/CAD Models	TK40E10N1,S1X Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 500µA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Series U-MOSVIII-H	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 50 V
Part Status Active	Power Dissipation (Max) 126W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 100 V	Supplier Device Package TO-220
Current - Continuous Drain (Id) @ 25°C 90A (Tc)	Package / Case TO-220-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number TK40E10
Rds On (Max) @ Id, Vgs 8.2mOhm @ 20A, 10V

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Substitutes (5)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
IRFB4410PBF	Infineon Technologies	1.550	IRFB4410PBF-ND	kr.18.39000	Similar
PSMN8R7-80PS,127	Nexperia USA Inc.	8	1727-5898-ND	kr.19.15000	Similar
SQP120N10-09_GE3	Vishay Siliconix	207	SQP120N10-09_GE3-ND	kr.26.63000	Similar
STP100N10F7	STMicroelectronics	1.189	497-13550-5-ND	kr.18.26000	Similar
SUP85N10-10-E3	Vishay Siliconix	979	SUP85N10-10-E3-ND	kr.31.95000	Similar

In-Stock: 6

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Tube

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Unit Price without VAT:	kr.21.75000
Unit Price with VAT:	kr.27.18750

TK40E10N1,S1X