Name: ISC027N10NM6ATMA1
Brand: Infineon Technologies
SKU: 448-ISC027N10NM6ATMA1TR-ND
Price: 38.95 DKK
Availability: OutOfStock

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ISC027N10NM6ATMA1
cms-digikey-product-number	448-ISC027N10NM6ATMA1TR-ND - Tape & Reel (TR) 448-ISC027N10NM6ATMA1CT-ND - Cut Tape (CT) 448-ISC027N10NM6ATMA1DKR-ND - Digi-Reel®
cms-manufacturer	Infineon Technologies
cms-manufacturer-product-number	ISC027N10NM6ATMA1
cms-description	TRENCH >=100V PG-TDSON-8
cms-standard-lead-time	61 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 100 V 23A (Ta), 192A (Tc) 3W (Ta), 217W (Tc) Surface Mount PG-TDSON-8 FL
Datasheet	Datasheet
cms-eda-cad-models	ISC027N10NM6ATMA1 Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™ 6
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 192A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.3V @ 116µA
Gate Charge (Qg) (Max) @ Vgs	72.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5500 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 217W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8 FL
Package / Case	8-PowerTDFN
Base Product Number	ISC027N