1200 V EliteSiC Diodes

Product Highlights > 1200 V EliteSiC Diodes

            1200 V EliteSiC Diodes
                    onsemi's silicon carbide (SiC) diodes benefits include faster operating frequency, increased power density, and reduced EMI
    

Image of onsemi's 1200 V Silicon Carbide (SiC) Diodes onsemi's EliteSiC Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance set silicon carbide as the next generation of power semiconductors. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Features

Ease of paralleling
High surge current capacitance
Max junction temperature: +175°C
No reverse recovery/no forward recovery
High switching frequency
Low forward voltage (V_F)
Positive temperature coefficient
AEC-Q101 qualified and PPAP capable

Applications

Automotive HEV-EV DC/DC converters
Automotive HEV-EV onboard chargers
Industrial power
PFC
Solar
UPS
Welding

Published: 2020-04-02

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