Name: SIHD2N80E-GE3
Brand: Vishay Siliconix
SKU: SIHD2N80E-GE3-ND
Price: 15.7625 DKK
Availability: OutOfStock

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SIHD2N80E-GE3
DigiKey Part Number	SIHD2N80E-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHD2N80E-GE3
Description	MOSFET N-CH 800V 2.8A DPAK
Manufacturer Standard Lead Time	15 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 2.8A (Tc) 62.5W (Tc) Surface Mount TO-252AA
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.6 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	315 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	SIHD2

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