N-Channel 650 V 21A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
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SIHB21N65EF-GE3

DigiKey Part Number
SIHB21N65EF-GE3-ND
Manufacturer
Manufacturer Product Number
SIHB21N65EF-GE3
Description
MOSFET N-CH 650V 21A D2PAK
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 21A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 10 V
Packaging
Tube
Vgs (Max)
±30V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
2322 pF @ 100 V
FET Type
Power Dissipation (Max)
208W (Tc)
Technology
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 92
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All prices are in DKK
Tube
QuantityUnit PriceExt Price
1kr.40.01000kr.40.01
50kr.21.08300kr.1,054.15
100kr.19.25840kr.1,925.84
500kr.16.06290kr.8,031.45
1.000kr.15.03702kr.15,037.02
2.000kr.14.47105kr.28,942.10
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:kr.40.01000
Unit Price with VAT:kr.50.01250