Name: SI2306BDS-T1-BE3
Brand: Vishay Siliconix
SKU: 742-SI2306BDS-T1-BE3TR-ND
Price: 6.8 DKK
Availability: OutOfStock

SI2306BDS-T1-BE3 is out of stock and can be placed on backorder.

Available Substitutes:

Parametric Equivalent

Vishay Siliconix

In Stock: 9.113

Unit Price: kr.3.46000

Parametric Equivalent

Vishay Siliconix

In Stock: 8.076

Unit Price: kr.2.50000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI2306BDS-T1-BE3
DigiKey Part Number	742-SI2306BDS-T1-BE3TR-ND - Tape & Reel (TR) 742-SI2306BDS-T1-BE3CT-ND - Cut Tape (CT) 742-SI2306BDS-T1-BE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI2306BDS-T1-BE3
Description	N-CHANNEL 30-V (D-S) MOSFET
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	N-Channel 30 V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	3.16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	47mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.5 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	305 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3