Name: TPN2R805PL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: 264-TPN2R805PL,L1QTR-ND
Price: 10.825 DKK
Availability: OutOfStock

TPN2R805PL,L1Q is out of stock and can be placed on backorder.

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N-Channel 45 V 80A (Tc) 2.67W (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPN2R805PL,L1Q
DigiKey Part Number	264-TPN2R805PL,L1QTR-ND - Tape & Reel (TR) 264-TPN2R805PL,L1QCT-ND - Cut Tape (CT) 264-TPN2R805PL,L1QDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPN2R805PL,L1Q
Description	MOSFET N-CH 45V 80A 8TSON
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 45 V 80A (Tc) 2.67W (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Datasheet	Datasheet
EDA/CAD Models	TPN2R805PL,L1Q Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	45 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	2.4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3200 pF @ 22.5 V
FET Feature	-
Power Dissipation (Max)	2.67W (Ta), 104W (Tc)
Operating Temperature	175°C
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.1x3.1)
Package / Case	8-PowerVDFN
Base Product Number	TPN2R805