Name: TK9J90E,S1E
Brand: Toshiba Semiconductor and Storage
SKU: TK9J90ES1E-ND
Price: 30.875 DKK
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK9J90E,S1E
DigiKey Part Number	TK9J90ES1E-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK9J90E,S1E
Description	MOSFET N-CH 900V 9A TO3P
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 900 V 9A (Ta) 250W (Tc) Through Hole TO-3P(N)
Datasheet	Datasheet
EDA/CAD Models	TK9J90E,S1E Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3
Base Product Number	TK9J90