Name: TK39J60W5,S1VQ
Brand: Toshiba Semiconductor and Storage
SKU: TK39J60W5S1VQ-ND
Price: 104.925 DKK
Availability: InStock

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TK39J60W5,S1VQ
DigiKey Part Number	TK39J60W5S1VQ-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK39J60W5,S1VQ
Description	MOSFET N-CH 600V 38.8A TO3P
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 38.8A (Ta) 270W (Tc) Through Hole TO-3P(N)
Datasheet	Datasheet
EDA/CAD Models	TK39J60W5,S1VQ Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.7V @ 1.9mA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Series DTMOSIV	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 300 V
Part Status Active	Power Dissipation (Max) 270W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 600 V	Supplier Device Package TO-3P(N)
Current - Continuous Drain (Id) @ 25°C 38.8A (Ta)	Package / Case TO-3P-3, SC-65-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number TK39J60
Rds On (Max) @ Id, Vgs 65mOhm @ 19.4A, 10V

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In-Stock: 26

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Tube

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Unit Price without VAT:	kr.83.94000
Unit Price with VAT:	kr.104.92500

TK39J60W5,S1VQ