TK16J60W,S1VQ is available for purchase but is not normally stocked.
Available Substitutes:

Similar


Toshiba Semiconductor and Storage
In Stock: 0
Unit Price: kr.62.53000
Datasheet

Direct


onsemi
In Stock: 0
Unit Price: kr.0.00000
Datasheet
GT50JR22(STA1,E,S)
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK16J60W,S1VQ

DigiKey Part Number
TK16J60WS1VQ-ND
Manufacturer
Manufacturer Product Number
TK16J60W,S1VQ
Description
MOSFET N-CH 600V 15.8A TO3P
Customer Reference
Detailed Description
N-Channel 600 V 15.8A (Ta) 130W (Tc) Through Hole TO-3P(N)
Datasheet
 Datasheet
EDA/CAD Models
TK16J60W,S1VQ Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id
3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
130W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
Base Product Number
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

Manufacturer Quote Required
This product requires a manufacturer-approved quote before it can be ordered. Orders must meet the manufacturer’s standard package quantity, may be subject to extended lead times, and cannot be canceled or returned. Quotes are typically processed within 3–5 business days after submission.
Login or Register to request a quote.