GT50JR22(STA1,E,S)
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TK16J60W,S1VE

DigiKey Part Number
264-TK16J60WS1VE-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK16J60W,S1VE
Description
X35 PB-F POWER MOSFET TRANSISTOR
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 15.8A (Ta) 130W (Tc) Through Hole TO-3P(N)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id
3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
130W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3
Base Product Number
TK16J60
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In-Stock: 35
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Quantity
All prices are in DKK
Tube
QuantityUnit PriceExt Price
1kr.42.24000kr.42.24
25kr.25.25960kr.631.49
100kr.24.20990kr.2,420.99
500kr.18.07206kr.9,036.03
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:kr.42.24000
Unit Price with VAT:kr.52.80000