Name: TK099V65Z,LQ
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK099V65ZLQTR-ND
Price: 58.3 DKK
Availability: InStock

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TK099V65Z,LQ
cms-digikey-product-number	264-TK099V65ZLQTR-ND - Tape & Reel (TR) 264-TK099V65ZLQCT-ND - Cut Tape (CT) 264-TK099V65ZLQDKR-ND - Digi-Reel®
cms-manufacturer	Toshiba Semiconductor and Storage
cms-manufacturer-product-number	TK099V65Z,LQ
cms-description	MOSFET N-CH 650V 30A 5DFN
cms-standard-lead-time	10 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 650 V 30A (Ta) 230W (Tc) Surface Mount 5-DFN (8x8)
Datasheet	Datasheet
cms-eda-cad-models	TK099V65Z,LQ Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSVI
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2780 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	150°C
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	5-DFN (8x8)
Package / Case	4-VSFN Exposed Pad
Base Product Number	TK099V65