Name: TK042N65Z5,S1F
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK042N65Z5S1F(S-ND
Price: 109.3375 DKK
Availability: InStock

N-Channel 650 V 55A (Ta) 360W (Tc) Through Hole TO-247

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TK042N65Z5,S1F
cms-digikey-product-number	264-TK042N65Z5S1F(S-ND
cms-manufacturer	Toshiba Semiconductor and Storage
cms-manufacturer-product-number	TK042N65Z5,S1F
cms-description	650V DTMOS6 HSD 42MOHM TO-247
cms-standard-lead-time	10 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 650 V 55A (Ta) 360W (Tc) Through Hole TO-247
Datasheet	Datasheet

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSVI
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	55A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	42mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 2.85mA
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6280 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	360W (Tc)
Operating Temperature	150°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3