Name: GCMS080C120S1-E1
Brand: SemiQ
SKU: 1560-GCMS080C120S1-E1-ND
Price: 178.875 DKK
Availability: InStock

cms-new-at-digikey

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

GCMS080C120S1-E1
DigiKey Part Number	1560-GCMS080C120S1-E1-ND
Manufacturer	SemiQ
Manufacturer Product Number	GCMS080C120S1-E1
Description	GEN3 1200V 80M SIC MOSFET & SBD
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 28A (Tc) 118W (Tc) Chassis Mount SOT-227
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
cms-filter-header-mfr	SemiQ
Series	QSiC™
cms-packaging	Tube
cms-part-status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	100mOhm @ 10A, 18V
Vgs(th) (Max) @ Id	4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 18 V
Vgs (Max)	+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds	1332 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	118W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227
Package / Case	SOT-227-4, miniBLOC