Name: RS1E200BNTB
Brand: Rohm Semiconductor
SKU: RS1E200BNTBTR-ND
Price: 5.275 DKK
Availability: OutOfStock

RS1E200BNTB is out of stock and can be placed on backorder.

Available Substitutes:

Direct

Infineon Technologies

In Stock: 0

Unit Price: kr.0.00000

Similar

Infineon Technologies

In Stock: 22.490

Unit Price: kr.9.02000

Similar

Infineon Technologies

In Stock: 9.783

Unit Price: kr.5.31000

Similar

Texas Instruments

In Stock: 10.717

Unit Price: kr.7.30000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

RS1E200BNTB
DigiKey Part Number	RS1E200BNTBTR-ND - Tape & Reel (TR) RS1E200BNTBCT-ND - Cut Tape (CT) RS1E200BNTBDKR-ND - Digi-Reel®
Manufacturer	Rohm Semiconductor
Manufacturer Product Number	RS1E200BNTB
Description	MOSFET N-CH 30V 20A 8HSOP
Manufacturer Standard Lead Time	21 Weeks
Customer Reference
Detailed Description	N-Channel 30 V 20A (Ta), 68A (Tc) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP
Datasheet	Datasheet
EDA/CAD Models	RS1E200BNTB Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Rohm Semiconductor
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3100 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 25W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-HSOP
Package / Case	8-PowerTDFN
Base Product Number	RS1E