Name: RQ3E120BNTB
Brand: Rohm Semiconductor
SKU: RQ3E120BNTBTR-ND
Price: 4 DKK
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

RQ3E120BNTB
DigiKey Part Number	RQ3E120BNTBTR-ND - Tape & Reel (TR) RQ3E120BNTBCT-ND - Cut Tape (CT) RQ3E120BNTBDKR-ND - Digi-Reel®
Manufacturer	Rohm Semiconductor
Manufacturer Product Number	RQ3E120BNTB
Description	MOSFET N-CH 30V 12A 8HSMT
Manufacturer Standard Lead Time	21 Weeks
Customer Reference
Detailed Description	N-Channel 30 V 12A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Datasheet	Datasheet
EDA/CAD Models	RQ3E120BNTB Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Rohm Semiconductor
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.3mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-HSMT (3.2x3)
Package / Case	8-PowerVDFN
Base Product Number	RQ3E120