Name: RF4E070BNTR
Brand: Rohm Semiconductor
SKU: RF4E070BNTRTR-ND
Price: 9.925 DKK
Availability: OutOfStock

RF4E070BNTR is out of stock and can be placed on backorder.

Available Substitutes:

Similar

Diodes Incorporated

In Stock: 2.990

Unit Price: kr.4.74000

Similar

Nexperia USA Inc.

In Stock: 1.535

Unit Price: kr.5.76000

Similar

Nexperia USA Inc.

In Stock: 310

Unit Price: kr.4.80000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

RF4E070BNTR
DigiKey Part Number	RF4E070BNTRTR-ND - Tape & Reel (TR) RF4E070BNTRCT-ND - Cut Tape (CT) RF4E070BNTRDKR-ND - Digi-Reel®
Manufacturer	Rohm Semiconductor
Manufacturer Product Number	RF4E070BNTR
Description	MOSFET N-CH 30V 7A HUML2020L8
Manufacturer Standard Lead Time	21 Weeks
Customer Reference
Detailed Description	N-Channel 30 V 7A (Ta) 2W (Ta) Surface Mount HUML2020L8
Datasheet	Datasheet
EDA/CAD Models	RF4E070BNTR Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Rohm Semiconductor
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	28.6mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.9 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	410 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	HUML2020L8
Package / Case	8-PowerUDFN
Base Product Number	RF4E070