Bipolar (BJT) Transistor NPN 200 V 100 mA 70MHz 1.2 W Through Hole TO-126
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2SC3416E

DigiKey Part Number
2156-2SC3416E-ND
Manufacturer
onsemi
Manufacturer Product Number
2SC3416E
Description
TRANS NPN 200V 0.1A TO-126
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 200 V 100 mA 70MHz 1.2 W Through Hole TO-126
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Bulk
Part Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
200 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 2mA, 20mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA, 10V
Power - Max
1.2 W
Frequency - Transition
70MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
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In-Stock: 5.418
Non-Cancelable/Non-Returnable
MARKETPLACE PRODUCT
Will ship in approximately 10 days from Rochester Electronics LLC
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Bulk:5418
Quantity
All prices are in DKK
Bulk
QuantityUnit PriceExt Price
865kr.2.25050kr.1,946.68
Unit Price without VAT:kr.2.25050
Unit Price with VAT:kr.2.81313