N-Channel 1000 V 8A (Tc) 225W (Tc) Through Hole TO-3PN
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FQA8N100C

DigiKey Part Number
FQA8N100CFS-ND
Manufacturer
onsemi
Manufacturer Product Number
FQA8N100C
Description
MOSFET N-CH 1000V 8A TO3PN
Manufacturer Standard Lead Time
19 Weeks
Customer Reference
Detailed Description
N-Channel 1000 V 8A (Tc) 225W (Tc) Through Hole TO-3PN
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
QFET®
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.45Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3220 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
225W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-3PN
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA8
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In-Stock: 358
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Quantity
All prices are in DKK
Tube
QuantityUnit PriceExt Price
1kr.41.09000kr.41.09
30kr.23.41367kr.702.41
120kr.19.52792kr.2,343.35
510kr.16.68018kr.8,506.89
1.020kr.16.34342kr.16,670.29
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:kr.41.09000
Unit Price with VAT:kr.51.36250