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TO-247-3
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TO-247-3
TO-247-3

IXSJ80N120R1

DigiKey Part Number
238-IXSJ80N120R1-ND
Manufacturer
IXYS
Manufacturer Product Number
IXSJ80N120R1
Description
1200V 18M (30A @ 25C) SIC MOSFET
Manufacturer Standard Lead Time
32 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 85A (Tc) 266W Through Hole ISO247-3L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
22.5mOhm @ 40A, 18V
Vgs(th) (Max) @ Id
4.8V @ 22.2mA
Gate Charge (Qg) (Max) @ Vgs
154 nC @ 18 V
Vgs (Max)
+21V, -4V
Input Capacitance (Ciss) (Max) @ Vds
4522 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
266W
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
ISO247-3L
Package / Case
TO-247-3
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Quantity
All prices are in DKK
Tube
QuantityUnit PriceExt Price
1kr.187.65000kr.187.65
30kr.121.93500kr.3,658.05
120kr.117.44000kr.14,092.80
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:kr.187.65000
Unit Price with VAT:kr.234.56250