Name: IPM018N10NM5LF2AUMA1
Brand: Infineon Technologies
SKU: 448-IPM018N10NM5LF2AUMA1TR-ND
Price: 70.9375 DKK
Availability: OutOfStock

New Product

N-Channel 100 V 30A (Ta), 285A (Tc) 3.8W (Ta), 349W (Tc) Surface Mount PG-HSOG-4-1

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPM018N10NM5LF2AUMA1
DigiKey Part Number	448-IPM018N10NM5LF2AUMA1TR-ND - Tape & Reel (TR) 448-IPM018N10NM5LF2AUMA1CT-ND - Cut Tape (CT) 448-IPM018N10NM5LF2AUMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPM018N10NM5LF2AUMA1
Description	IPM018N10NM5LF2AUMA1
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 30A (Ta), 285A (Tc) 3.8W (Ta), 349W (Tc) Surface Mount PG-HSOG-4-1
Datasheet	Datasheet
EDA/CAD Models	IPM018N10NM5LF2AUMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™ 5
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	30A (Ta), 285A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V, 15V
Rds On (Max) @ Id, Vgs	1.7mOhm @ 100A, 15V
Vgs(th) (Max) @ Id	3.45V @ 240µA
Gate Charge (Qg) (Max) @ Vgs	178 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	14000 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 349W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOG-4-1
Package / Case	4-PowerSFN