Name: IPB017N08N5ATMA1
Brand: Infineon Technologies
SKU: IPB017N08N5ATMA1TR-ND
Price: 57.1375 DKK
Availability: InStock

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IPB017N08N5ATMA1
DigiKey Part Number	IPB017N08N5ATMA1TR-ND - Tape & Reel (TR) IPB017N08N5ATMA1CT-ND - Cut Tape (CT) IPB017N08N5ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPB017N08N5ATMA1
Description	MOSFET N-CH 80V 120A D2PAK
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 80 V 120A (Tc) 375W (Tc) Surface Mount PG-TO263-3
Datasheet	Datasheet
EDA/CAD Models	IPB017N08N5ATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.8V @ 280µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 223 nC @ 10 V
Series OptiMOS™	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 16900 pF @ 40 V
Part Status Active	Power Dissipation (Max) 375W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 80 V	Supplier Device Package PG-TO263-3
Current - Continuous Drain (Id) @ 25°C 120A (Tc)	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V	Base Product Number IPB017
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V