Name: IMT65R026M2HXUMA1
Brand: Infineon Technologies
SKU: 448-IMT65R026M2HXUMA1TR-ND
Price: 95.575 DKK
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMT65R026M2HXUMA1
DigiKey Part Number	448-IMT65R026M2HXUMA1TR-ND - Tape & Reel (TR) 448-IMT65R026M2HXUMA1CT-ND - Cut Tape (CT) 448-IMT65R026M2HXUMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMT65R026M2HXUMA1
Description	SILICON CARBIDE MOSFET
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 81A (Tc) 365W (Tc) Surface Mount PG-HSOF-8-2
Datasheet	Datasheet

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 24mOhm @ 34.5A, 20V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 5.6V @ 7mA
Series CoolSiC™	Gate Charge (Qg) (Max) @ Vgs 42 nC @ 18 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) +23V, -7V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 1499 pF @ 400 V
FET Type N-Channel	Power Dissipation (Max) 365W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 650 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 81A (Tc)	Supplier Device Package PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V	Package / Case 8-PowerSFN