Name: IAUC26N10S5L245ATMA1
Brand: Infineon Technologies
SKU: 448-IAUC26N10S5L245ATMA1TR-ND
Price: 11.2 DKK
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IAUC26N10S5L245ATMA1
DigiKey Part Number	448-IAUC26N10S5L245ATMA1TR-ND - Tape & Reel (TR) 448-IAUC26N10S5L245ATMA1CT-ND - Cut Tape (CT) 448-IAUC26N10S5L245ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IAUC26N10S5L245ATMA1
Description	MOSFET_(75V 120V( PG-TDSON-8
Manufacturer Standard Lead Time	26 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 26A (Tj) 40W (Tc) Surface Mount PG-TDSON-8-33
Datasheet	Datasheet
EDA/CAD Models	IAUC26N10S5L245ATMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	26A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	24.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	2.2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	762 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-33
Package / Case	8-PowerTDFN