TO-263-8
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TO-263-8
TO-263-7

G3R75MT12J

DigiKey Part Number
1242-G3R75MT12J-ND
Manufacturer
GeneSiC Semiconductor
Manufacturer Product Number
G3R75MT12J
Description
SIC MOSFET N-CH 42A TO263-7
Customer Reference
Detailed Description
N-Channel 1200 V 42A (Tc) 224W (Tc) Surface Mount TO-263-7
Datasheet
 Datasheet
EDA/CAD Models
G3R75MT12J Models
Product Attributes
Type
Description
Select All
Category
Mfr
GeneSiC Semiconductor
Series
G3R™
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
2.69V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 15 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
1560 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
224W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
G3R75
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Quantity
All prices are in DKK
Tube
QuantityUnit PriceExt Price
1kr.70.59000kr.70.59
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:kr.70.59000
Unit Price with VAT:kr.88.23750