Mosfet Array 10V 600mW Through Hole 8-PDIP
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ALD1110EPAL

DigiKey Part Number
ALD1110EPAL-ND
Manufacturer
Manufacturer Product Number
ALD1110EPAL
Description
MOSFET 2N-CH 10V 8PDIP
Customer Reference
Detailed Description
Mosfet Array 10V 600mW Through Hole 8-PDIP
Datasheet
 Datasheet
EDA/CAD Models
ALD1110EPAL Models
Product Attributes
Type
Description
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Category
Manufacturer
Advanced Linear Devices Inc.
Series
Packaging
Tube
Part Status
Not For New Designs
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Matched Pair
FET Feature
-
Drain to Source Voltage (Vdss)
10V
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
500Ohm @ 5V
Vgs(th) (Max) @ Id
1.01V @ 1µA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
2.5pF @ 5V
Power - Max
600mW
Operating Temperature
0°C ~ 70°C (TJ)
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Supplier Device Package
8-PDIP
Base Product Number
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Available To Order
This product is not kept in stock at DigiKey. The lead time shown will apply to the manufacturer’s shipment to DigiKey. Upon receiving the product, DigiKey will ship to fill open orders.
Not recommended for new design, minimums may apply
All prices are in DKK
Tube
QuantityUnit PriceExt Price
50kr.31.49680kr.1,574.84
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:kr.31.49680
Unit Price with VAT:kr.39.37100