N-Channel 8 V (D-S) MOSFETs

Product Highlights > N-Channel 8 V (D-S) MOSFETs

            N-Channel 8 V (D-S) MOSFETs 
                    Vishay Siliconix offers 8 V, n-channel, TrenchFET® power MOSFETs
    

Image of Vishay/Siliconix's N-Channel 8 V (D-S) MOSFETs Vishay Siliconix introduces 8 V, n-channel TrenchFET® Power MOSFETs with industry-low on-resistance down to 20 mΩ at 4.5 V. These devices come in chip scale, MICRO FOOT®, 1 mm x 1 mm and 1.6 mm x 1.6 mm packages.

For applications where low on-resistance is more critical than space, Vishay’s 8 V n-channel Si8424CDB TrenchFET power MOSFET offers maximum on-resistance of 20 mΩ. This comes with a 4.5 V gate drive in a 1.6 mm x 1.6 mm x 0.6 mm CSP MICRO FOOT package.

With 43 mΩ maximum on-resistance at 4.5 V, the smaller 1 mm x 1mm x 0.55 mm Si8466EDB 8 V n-channel MOSFET may be used for space-critical applications.

The Si8466EDB and Si8424CDB are the latest expansion to the MICRO FOOT family.

Benefits
Compact 1 mm x 1 mm x 0.55 mm and 1.6 mm x 1.6 mm x 0.6 mm MICRO FOOT packages Saves PCB space and provides ultra-thin profiles to enable slimmer and lighter portable electronics On-resistance down to 20 mΩ maximum at a 4.5 V gate drive Lower conduction losses for reduced power consumption and longer battery life between charges Lower voltage drop across the load switch to prevent unwanted under-voltage lockout		Si8466EDB provides 3000 V typical ESD protection Si8424CDB and Si8466EDB each offer on-resistance ratings down to 1.2 V Allows the devices to work with the lower-voltage gate drives and lower bus voltages common in handheld devices Saves the space and cost of level-shifting circuitry Compliant to RoHS Directive 2011/65/EU Halogen-free, according to the JEDEC JS709A definition

Applications
Battery or load switching in power management applications for portable electronics such as: Smart phones Tablet PCs Mobile computing devices