1200 V/1700 V SiC Schottky Diodes

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            1200 V/1700 V SiC Schottky Diodes
                    onsemi 1200 V and 1700 V SiC Schottky diodes deliver expanded forward current options with high-performance features
    

Image of Qorvo's 1200 V/1700 V SiC Schottky Diodes onsemi 1200 V UJ3D1210K2 (10 A), UJ3D1220K2 (20 A), UJ3D1250K2 (50 A), and 1700 V UJ3D1725K2 (25 A) are based on the 3rd generation of high-performance SiC merged-PiN-Schottky diodes. They have low V_F-Q_C for fast switching applications and come in an industry-standard TO247-2L package. With zero reverse recovery charge and +175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements, such as EV fast chargers and renewable energy. All devices are AEC-Q101 qualified.

Features

Four SiC Schottky diodes

1200 V: 10 A, 20 A, 50 A
1700 V: 25 A

Lowest V_F-Q_Cfor fast switching applications

Excellent surge current capability
Industry-standard TO247-2L package
>8.8 mm creepage & clearance
AEC-Q101 qualified

Applications

Power converters
Industrial motor drives
Switch-mode power supplies

Power factor correction modules
EV fast chargers
Renewable energy