Taiwan Semiconductor

Wide Bandgap SiC 650 V Schottky Barrier Diodes

Taiwan Semiconductor's SiC MPS diodes serve as the ultimate tool for enhancing efficiency, reliability, and performance

Image of Taiwan Semiconductor's Wide Bandgap Schottky Barrier DiodesTaiwan Semiconductor's 650 V silicon carbide Schottky barrier diodes are suitable for high-efficiency AC/DC, DC/DC, and DC/AC conversion applications. Unlike silicon-based fast-recovery rectifiers, these SiC devices have negligible switching losses due to low capacitive charge (QC). This makes them suitable for high-speed switching applications, benefiting circuit designs with increased power density and can reduce overall solution size.

The SiC devices combine Schottky diodes for low forward voltage drop and P-N junction diodes for high reverse breakdown voltage, making them the ultimate protectors for power lines, control buttons, and data cables.

Features
  • Max. junction temperature: +175°C
  • High-speed switching
  • High-frequency operation
  • Positive temperature coefficient on VF
  • SPICE models available
  • Thermal models available
  • PFC boost diode
  • Free-wheeling diode
  • Full wave bridge
  • Vienna bridgeless circuit
Applications
  • AC/DC conversion, PFC boost
  • DC/DC, solar inverters
  • Data center and server power
  • Telecom, datacom power
  • UPS systems
Published: 2024-08-07