NXP Semiconductors

BLF647P Broadband Power LDMOS Transistor

A 200 W LDMOS RF power transistor from NXP Semiconductors

Image of NXP Semiconductors' BLF647P Broadband Power LDMOS TransistorNXP Semiconductors presents a 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

Features
  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

BLF647P Broadband Power LDMOS Transistor

ImageManufacturer Part NumberDescriptionAvailable QuantityPrice
RF MOSFET LDMOS 32V LDMOSTBLF647P,112RF MOSFET LDMOS 32V LDMOST139 - Immediate$1,423.74View Details
RF MOSFET LDMOS 32V LDMOSTBLF647PS,112RF MOSFET LDMOS 32V LDMOST119 - Immediate$1,210.18View Details
Published: 2015-02-02

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Publish Date: 2020-06-25