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Silicon Carbide Power Schottky Diodes
Power Schottky diodes from GeneSiC with improved circuit efficiency
GeneSiC Semiconductor introduces their Silicon Carbide Power Schottky diodes. This product promotes improved circuit efficiency (lower overall cost), low switching losses, ease of paralleling devices without thermal runaway, smaller heat sink requirements, low reverse recovery current, low device capacitance and low reverse leakage current at operating temperatures. The two products offer at 1200 V in a TO-252 package, and provide 2 A at 26 nC, as well as 5 A at 35 nC.
Features
- 1200 V Schottky rectifier
- 175°C maximum operating temperature
- Temperature independent switching behavior
- Superior surge current capability
- Positive temperature coefficient of Vf
- Extremely fast switching speeds
- Superior figure of merit Qc/If
Applications
- Power Factor Correction (PFC)
- Switched-Mode Power Supply (SMPS)
- Solar inverters
- Wind turbine inverters
- Motor drives
- Induction heating
- High voltage multipliers
Silicon Carbide Power Schottky Diodes
| Image | Manufacturer Part Number | Description | Available Quantity | Price | ||
|---|---|---|---|---|---|---|
 |  | GB01SLT12-252 | DIODE SIL CARBIDE 1.2KV 1A TO252 | 0 - Immediate | $8.64 | View Details |
Silicon Carbide Power Schottky Diodes
| Image | Manufacturer Part Number | Description | Available Quantity | Price | ||
|---|---|---|---|---|---|---|
| | GB01SLT12-252 | DIODE SIL CARBIDE 1.2KV 1A TO252 | 0 - Immediate | $8.64 | View Details |
Published: 2013-02-06
Denmark