IXB(K,X)75N170 Datasheet by IXYS

© 2009 IXYS CORPORATION, All Rights Reserved
Features
zInternational Standard Packages
zHigh Blocking Voltage
zHigh Current Handling Capability
zAnti-Parallel Diode
Advantages
zHigh Power Density
zLow Gate Drive Requirement
zIntergrated Diode Can Be Used for
Protection
Applications
zCapacitor Discharge
zAC Switches
zSwitch-Mode and Resonant-Mode
Power Supplies
zUPS
zAC Motor Drives
DS100167A(10/09)
BiMOSFETTM Monolithic
Bipolar MOS Transistor
IXBK75N170
IXBX75N170
VCES = 1700V
IC110 = 75A
VCE(sat) ≤≤
≤≤
≤ 3.1V
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 1700 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ1700 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (Chip Capabilitty) 200 A
ILRMS TC= 25°C (Lead RMS Limit) 160 A
IC110 TC= 110°C 75 A
ICM TC= 25°C, 1ms 580 A
SSOA VGE = 15V, TVJ = 125°C, RG = 1Ω ICM = 150 A
(RBSOA) Clamped Inductive Load VCE < 0.8 • VCES
PCTC= 25°C 1040 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062 in.) from Case for 10 260 °C
MdMounting Torque (TO-264 ) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247 ) 20..120/4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC= 250μA, VGE = 0V 1700 V
VGE(th) IC= 1.5mA, VCE = VGE 2.5 5.5 V
ICES VCE = 0.8 • VCES, VGE = 0V 25 μA
TJ = 125°C 2 mA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC= IC110, VGE = 15V, Note 1 2.6 3.1 V
TJ = 125°C 3.1 V
Preliminary Technical Information
G = Gate C = Collector
E = Emitter Tab = Collector
PLUS247TM (IXBX)
TO-264 (IXBK)
G
CE
GCE
Tab
Tab
IXYS r n A JET z x E M Li! H hm D
IXBK75N170
IXBX75N170
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfS IC = IC110, VCE = 10V, Note 1 34 56 S
Cies 6930 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 400 pF
Cres 150 pF
Qg 350 nC
Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 50 nC
Qgc 160 nC
td(on) 46 ns
tr 160 ns
td(off) 260 ns
tf 440 ns
td(on) 47 ns
tr 230 ns
td(off) 260 ns
tf 580 ns
RthJC 0.12 °C/W
RthCS 0.15 °C/W
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Additional provisions for lead-to-lead isolation are required at VCE >1200V.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
PLUS247TM (IXBX) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max
VF IF = IC110, VGE = 0V, Note 1 3.0 V
trr 1.5 μs
IRM 50 A
QRM 38.2 μC
IF = 37A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
Resistive load, TJ = 25°C
IC = IC110, VGE = 15V
RG = 1Ω, VCE = 0.5 • VCES
Resistive load, TJ = 125°C
IC = IC110, VGE = 15V
RG = 1Ω, VCE = 0.5 • VCES
TO-264 AA ( IXBK) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
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© 2009 IXYS CORPORATION, All Rights Reserved
IXBK75N170
IXBX75N170
IXYS REF: B_75N170(8T)7-01-09
Fig. 1. Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
19V
15V
13V
11V
9V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
40
80
120
160
200
240
280
320
0 2 4 6 8 10 12 14 16 18
V
CE
- Volts
I
C
-
Amperes
V
GE
= 25V
17V
15V
13V
11V
7V
9V
Fig. 3. Output Characteristics
@ 125ºC
0
20
40
60
80
100
120
140
160
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
19V
15V
13V
11V
9V
7V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 150A
I
C
= 75A
I
C
= 37.5A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5 7 9 11 13 15 17 19 21 23 25
V
GE
- Volts
V
CE
- Volts
I
C
= 150A
T
J
= 25ºC
37.5A
75A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
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IXBK75N170
IXBX75N170
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
0 20 40 60 80 100 120 140 160 180 200 220
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200 240 280 320 360
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 850V
I
C
= 75A
I
G
= 10mA
Fig. 11. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
160
200 400 600 800 1000 1200 1400 1600 1800
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 1Ω
dV / dt < 10V / ns
Fig. 10. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
Fig. 12. Maximum Transient Thermal Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
0
50
100
150
200
250
300
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V
F
- Volts
I
F
- Amperes
T
J
= 125ºC
T
J
= 25ºC
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© 2009 IXYS CORPORATION, All Rights Reserved
IXBK75N170
IXBX75N170
Fig. 14. Resistive Turn-on
Rise Time vs. Collector Current
0
50
100
150
200
250
300
350
400
450
30 40 50 60 70 80 90 100 110 120 130 140 150
I
C
- Amperes
t
r
- Nanoseconds
T
J
= 125ºC
T
J
= 25ºC
R
G
= 1Ω , V
GE
= 15V
V
CE
= 850V
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
100
200
300
400
500
600
700
800
12345678910
R
G
- Ohms
t
r
- Nanoseconds
45
50
55
60
65
70
75
80
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 150A
I
C
= 75A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
100
200
300
400
500
600
700
800
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
180
200
220
240
260
280
300
320
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GE
= 15V
V
CE
= 850V
I
C
= 75A
I
C
= 150A
Fig. 17. Resistive Turn-off
Switching Times vs. Collector Current
100
200
300
400
500
600
700
800
900
1000
30 40 50 60 70 80 90 100 110 120 130 140 150
I
C
- Amperes
t
f
- Nanoseconds
160
180
200
220
240
260
280
300
320
340
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GE
= 15V
V
CE
= 850V
T
J
= 125ºC, 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
120
160
200
240
280
320
360
400
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1Ω , V
GE
= 15V
V
CE
= 850V
I
C
= 150A
I
C
= 75A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
0
100
200
300
400
500
600
700
800
900
12345678910
R
G
- Ohms
t
f i
- Nanoseconds
160
200
240
280
320
360
400
440
480
520
t
d
(
off
)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 150A
I
C
= 75A
IXYS REF: B_75N170(8T)7-01-09
IXYS A Lillelluse Tecnnumgy
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