BSR13,14 Datasheet by Nexperia USA Inc.

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DATA SHEET
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 13
DISCRETE SEMICONDUCTORS
BSR13; BSR14
NPN switching transistors
2004 Jan 13 2
NXP Semiconductors Product data sheet
NPN switching transistors BSR13; BSR14
FEATURES
•High current (max. 800 mA)
•Low voltage (max. 40 V).
APPLICATIONS
•Switching and linear applications.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complements: BSR15 and BSR16.
MARKING
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
BSR13 U7*
BSR14 U8*
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
BSR13 −plastic surface mounted package; 3 leads SOT23
BSR14
2004 Jan 13 3
NXP Semiconductors Product data sheet
NPN switching transistors BSR13; BSR14
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BSR13 −60 V
BSR14 −75 V
VCEO collector-emitter voltage open base
BSR13 −30 V
BSR14 −40 V
VEBO emitter-base voltage open collector
BSR13 −5 V
BSR14 −6 V
ICcollector current (DC) −800 mA
ICM peak collector current −800 mA
IBM peak base current −200 mA
Ptot total power dissipation Tamb ≤ 25 °C−250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current
BSR13 IE = 0; VCB = 50 V −30 nA
IE = 0; VCB = 50 V; Tj = 150 °C−10 µA
collector cut-off current
BSR14 IE = 0; VCB = 60 V −10 nA
IE = 0; VCB = 60 V; Tj = 150 °C−10 µA
IEBO emitter cut-off current IC = 0; VEB = 5 V
BSR13 −30 nA
BSR14 −10 nA
2004 Jan 13 4
NXP Semiconductors Product data sheet
NPN switching transistors BSR13; BSR14
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
hFE DC current gain IC = 0.1 mA; VCE = 10 V; note 1 35 −
IC = 1 mA; VCE = 10 V; note 1 50 −
IC = 10 mA; VCE = 10 V; note 1 75 −
IC = 150 mA; VCE = 10 V; note 1 100 300
IC = 150 mA; VCE = 1 V; note 1 50 −
DC current gain IC = 500 mA; VCE = 10 V; note 1
BSR13 30 −
BSR14 40 −
VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA
BSR13 −400 mV
BSR14 −300 mV
collector-emitter saturation voltage IC = 500 mA; IB = 50 mA
BSR13 −1 .6 V
BSR14 −1 V
VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA
BSR13 −1 .3 V
BSR14 0.6 1.2 V
base-emitter saturation voltage IC = 500 mA; IB = 50 mA
BSR13 −2 .6 V
BSR14 −2 V
Cccollector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz −8pF
fTtransition frequency IC = 20 mA; VCE = 20 V;
f = 100 MHz
BSR13 250 −MHz
BSR14 300 −MHz
Switching times (between 10% and 90% levels); see Fig.2
ton turn-on time ICon = 150 mA; IBon = 15 mA;
IBoff = −15 mA
−35 ns
tddelay time −15 ns
trrise time −20 ns
toff turn-off time −250 ns
tsstorage time −200 ns
tffall time −60 ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
2004 Jan 13
2004 Jan 13 5
NXP Semiconductors Product data sheet
NPN switching transistors BSR13; BSR14
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB
(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
V
BB
Vi
V
CC
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope: input impedance Zi = ≥ 100 Ω.
Fig.2 Test circuit for switching times.
n 1 2mm scawe DIMENSIONS (mm amine or 9 al A] UNIT A max up c u E e 91 RE LP a v w H 045 ms 30 14 25 0A5 055 mm 09 01 038 009 28 12 ‘9 ”95 21 m5 045 02 0‘ REFERENCES OUTLINE EUROPEAN “55'0" IEc JEDEC JEITA PROJECYION 'SSUE DATE W some ToeasAB a @ 0670346 2004 Jan 13
2004 Jan 13 6
NXP Semiconductors Product data sheet
NPN switching transistors BSR13; BSR14
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Jan 13 7
NXP Semiconductors Product data sheet
NPN switching transistors BSR13; BSR14
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
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specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/04/pp8 Date of release: 2004 Jan 13 Document order number: 9397 750 12419