G-MRCO-017 Datasheet by TE Connectivity Measurement Specialties

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SENSOR SOLUTIONS ///MS32 Rev 6 07/2020
Page 1
Figure 1: Characteristic curves for MS32 at
different ambient temperatures (-20°C, +30°C,
+80°C)
FEATURES
Sensor based on solid state
magnetoresistance effect
Unipolar signal output
Linear field response
High sensitivity, low hysteresis
Temperature compensated
switching point
Low power consumption due to high
bridge resistance
Supply voltage up to 30 V
Small TDFN package
MS32
Switching Sensor
SPECIFICATIONS
AMR Switching-Sensor
TDFN Outline 2.5x2.5x0.8 mm3
Temperature Compensated Switching Point
Low Power Consumption
The MS32 is a magnetic field sensor which is built in the form of a
Wheatstone bridge. Each of its four resistors is made from
Permalloy, a material that shows the anisotropic magneto
resistance effect. An unidirectional magnetic field in the surface
parallel to the chip (x-y plane) along the y-axis will deliver a field
dependent output signal. A magnetic switching point, which is
almost independent on temperature is typically set to
Hs=1.85 kA/m. In addition, the characteristic curve is linear over a
wide magnetic field range. Thus, the new MS32 simplifies the
adaption of the sensor to different mechanical and magnetical
environments. The sensor die is packaged in a TDFN package.
APPLICATIONS
Contactless position detection (presence,
open/close)
Industrial
Consumer
Automotive
Small stroke pneumatic cylinders
Cover positions of Notebooks and Mobiles
Doors, windows etc.
-6
-4
-2
0
2
4
6
8
0 1 2 3 4 5 6 7
Vo in mv/V
-20°C
+30°C
+80°C
Hs-range
output amplitude
sensitivity
sw itching field Hs
Page 2
MS32
Switching Sensor
SENSOR SOLUTIONS /// MS32 Rev 6 07/2020
Page 2
CHARACTERISTIC VALUES
Parameter
Condition
Symbol
Min
Typ
Max
Unit
Mechanical dimensions
Length
X
2.5
mm
Width
Y
2.5
mm
Height
Z
0.75
mm
Pad size
7)
0.25 x 0.30
mm2
Operating limits
Max. supply voltage
VCC, MAX
30
V
Temp. compensation range
TCOMP
-25
+85
°C
Operating temperature
TOP
-45
+125
°C
Storage temperature
TST
-45
+150
°C
Stress above one or more of the limiting values may cause permanent damage to the device. Exposure to limiting values for extended periods
may affect device reliability.
Parameter
Condition
Symbol
Min
Typ
Max
Unit
Sensor specification (VCC = 5 V, T = 30 °C)
Supply voltage
VCC
5
30
V
Resistance
RB
10300
11500
Offset
VOFF/VCC
-4
-1.5
mV/V
Sensitivity
1)
S
2
3
(mV/V)/(kA/m)
Output amplitude
2)
VMAX
8
mV/V
Hysteresis (@ V0=0) 3)
Hyst.
0.9
mV/V
Sensor specification (T = -25 °C; +85°C; Conditions A & B) 6)
TC of amplitude
TCSV
-0.35
%/K
TC of bridge resistance
TCBR
+0.35
%/K
Switching field 5)
4)
Hs
1.40
1.85
2.30
kA/m
All parameters are measured on wafer level.
1) average gradient in the range 1.0 - 2.0 kA/m
2) difference between output voltage/supply voltage measured at H = 7 kA/m and H = 0 kA/m
3) hysteresis [in kA/m] = hysteresis [in mV/V] /S
4) switching voltage = 0 mV/V
5) switching field = magnetic field at switching voltage
6) values at –25°C can be determined by linear extrapolation from +30°C- and +85°C-values.
7) recommended solder reflow process according to IPC/JEDEC J-STD-020D (Pb-Free Process)
Va: GND +V Page 3
MS32
Switching Sensor
SENSOR SOLUTIONS /// MS32 Rev 6 07/2020
Page 3
MEASUREMENT CONDITIONS
Parameter
Symbol
Unit
Condition
A. Set Up Conditions
ambient temperature
T
°C
T = 23 +/- 5 °C (unless otherwise noted)
supply voltage
VCC
V
VCC = 5 V
applied magnetic field
HY
kA/m
HY = -7 .. +7 kA/m; along y-direction; |HX| < 100 A/m
Pre-magnetization along x-direction with HX >= 3 kA/m
B. Parameter Definitions (T= -25 °C, +85 °C) see characteristic values 6)
ambient temperatures
T
°C
T1 = -25 , T0 = +30 , T2 = +85 °C
TC of amplitude
TCSV
%/K
%100
)(
)()(
)(
1
1
12
12
TV
TVTV
TT
TCV
a
aa
TC of resistance
TCBR
%/K
%100
)(
)()(
)(
1
1
12
12
TR
TRTR
TT
TCR
TC of offset
TCVOFF
µV/(VK)
)(
)()(
12
12
TT
TVoffTVoff
TCVoff
BLOCK DIAGRAM
Figure 2: internal and external connections (TDFN, Chip)
GND
VCC
+VO
n. c.
n. c.
n. c.
n. c.
-VO
1
5
8
4
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MS32
Switching Sensor
SENSOR SOLUTIONS /// MS32 Rev 6 07/2020
Page 4
SENSOR OUTLINE
Figure 3: TDFN-package outline and recommended land pattern
Pin assignment
Note:
Pin 1 position is marked by a dot on the top side and by the chamfered corner of the bottom plate.
The bottom plate is designated to be a heat sink. It has no electrical connection to any pin.
The sensitive area is positioned in the center of the package.
Pin
Symbol
Function
1
+VO
positive output bridge
2
n. c.
not connected
3
n. c.
not connected
4
GND
ground
5
-VO
negative output bridge
6
n. c.
not connected
7
n. c.
not connected
8
VCC
supply voltage bridge
I M832 7 Figure 4 Typical app/Icahon geomefly of M332 8 GND VCC 4 Page 5
MS32
Switching Sensor
SENSOR SOLUTIONS /// MS32 Rev 6 07/2020
Page 5
APPLICATION
CIRCUIT EXAMPLES
Figure 5: Switching point detection without hysteresis
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MS32
Switching Sensor
SENSOR SOLUTIONS /// MS32 Rev 6 07/2020
Page 6
Figure 6: Switching point detection with hysteresis
TAPE AND REEL PACKAGING INFORMATION
Description
Reel size
Units/reel
Pin 1 orientation
Note
MS32
7”
3,000
Top-right of sprocket
hole side
ORDERING CODE
Device
Package
MOQ
Part number
MS32 die
Wafer / undiced
1 wafer
on request
MS32
TDFN 2.5 x 2.5
1 reel
G-MRCO-017
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