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Electrical Characteristics (continued)
(VSYS = 3.7V, VCAP = 2.7V, TJ= -40°C to +125°C (typical values at TJ= +25°C), circuit of Figure 1, unless otherwise specified.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
UVLO Threshold VUVLOF VVSYS falling, 100mV typical hysteresis 1.7 1.8 1.9 V
FBS Backup Voltage VFBS FBS rising, when discharging stops -2% 0.5 +2% V
FBS Charging
Threshold VTH_FBS_CHG Above FBS backup voltage, when
charging begins, 30mV typical hysteresis 25 60 95 mV
FBCH Threshold VTH_FBCH FBCH rising, when charging stops, 25mV
typical hysteresis -2% 0.5 +2% V
FBCL Threshold VTH_FBCL FBCL falling, when preserve mode starts,
25mV typical hysteresis -3.5% 0.475 +3.5% V
EN Threshold VIL When LX stops switching, EN falling 225 600 mV
VIH EN rising 660 925
ISET Resistor Range RISET Guaranteed by LX peak current limits 20 100 kΩ
LX Peak Backup
Current Limit (Note 1) IDCHG
Circuit of Figure 1, VCAP = 2V, VSYS =
2.9V, RISET = 20kΩ 2.0 2.5 3.0
A
Circuit of Figure 1, VCAP = 2V, VSYS =
2.9V, RISET = 100kΩ 0.50
LX Peak Charge Current
Limit (Note 1) ICHG
Circuit of Figure 1, VSYS = 3.7V, VCAP =
2V, RISET = 20kΩ 400 500 600
mA
Circuit of Figure 1, VSYS = 3.7V, VCAP =
2V, RISET = 100kΩ 100
FBS/FBCH/FBCL Input
Bias Current
IFBS/FBCH/
FBCL
VFBS/FBCH/FBCL = 0.5V, TA= +25°C -0.1 0.001 0.1 μA
VFBS/FBCH/FBCL = 0.5V 0.01
EN Input Leakage
Current IEN
0V < VEN < 5.5V, TA= +25°C -0.1 0.001 0.1 μA
0V < VEN < 5.5V 0.01
LX Switching Frequency fSW Delivering maximum current from CAP 2 MHz
LX Low-Side FET
Resistance RLOW VSYS = 3V, LX switched to GND 50 100 mΩ
LX High-Side FET
Resistance RHIGH VSYS = 3V, LX switched to SYS 80 160 mΩ
LX Leakage Current ILX_LKG
VEN = 0V, VSYS = 5V, VLX = 0V/5V, TA=
+25°C -1 1 μA
VEN = 0V, VSYS = 5V, VLX = 0V/5V 0.1
Maximum On-Time tON Backup mode, VFBS = 0.485V 320 400 480 ns
Minimum Off-Time tOFF Backup mode, VFBS = 0.485V 80 100 120 ns
Overtemperature
Lockout Threshold TOTLO TJrising, 15°C typical hysteresis 165 °C
High-Side FET Zero-
Crossing (Note 1) IZXP Circuit of Figure 1, VCAP = 2V, VSYS =
2.9V 25 50 75 mA
Low-Side FET Zero-
Crossing (Note 1) IZXN Circuit of Figure 1, VSYS = 3.7V, VCAP =
2V 25 50 75 mA
BKUPB Leakage
Current IBKUPB
VEN = 0V, VBKUPB = 5V, TA= +25°C -1 1 μA
VEN = 0V, VBKUPB = 5V 0.1
MAX38888 2.5V to 5.0V, 0.5A/2.5A Reversible Buck/Boost
Regulator for Backup Power Applications
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