DDTD(zzzz)U Datasheet by Diodes Incorporated

® DDTD xxxxU 501.323 Dim Min Max A D 25 D 40 B I 15 I 35 C 2 00 2 20 n u 65 Nommai E D 30 D 40 G I 20 I 40 H I 50 2 20 J 0,0 0 10 K D 90 I 00 L D 25 D 40 M D 10 D 15 ‘ a \\ ‘/ All Dimensions in mm N R1 (NOM) R2 (MOM) MARKING a DDTDHSEU 1K 1K N60 DDTD123EU 2 2K 2.2K N61 DDTDMSEU 4 7K 4.7K N62 DDTDIMEU 10K 10K N63 DDTD122JU 0.22K 4.7K N64 ‘ I ‘ ‘ DDTDHSZU 1K 10K N65 DDTD123YU 2 2K 10K N66 DDTDiaaHu 3 3K 10K N67 DDTD123TU 2 2K OPEN N69 DDTDMSTU 4 7K OPEN N70 DDTD! mu 10K OPEN N71 DDTD! meu 0 10K N72 Characteristic Symbol Value um: Suppiy Voilage‘ 1310(2) vac 50 v Inpuivmiage, (1)10 (2i DDTD! 13EU 710 in +10 DDTD|23EU riflHO +12 DDTDMSEU riflHO +30 DDTDTHEU V riflHO +40 V DDTD122JU ‘N 75 io +5 DDTDHSZU 75 m +10 DDTDTZCWU 75 m +12 DDTDTSSHU 76 m +20 Inpuivmiage, (2)10 (ii DDTDizaTU DDTDMSTU v 5 v DDTDi MTU E30 \W' DDTD1 meu Ompui Current AU ‘9 500 mA Power Dissmalien Pa 200 mw Thermai Resusiance‘ Junction in Arnhem Air (None N PM 625 CC/w Operaimg and Siorage Temperature Range Th T579 755 m +150 0
DDTD (xxxx) U
NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
DS30382 Rev. 7 - 2
1 of 3
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© Diodes Incorporated
• Complementary PNP Types Available (DDTB)
• Built-In Biasing Resistors, R1, R2
• Lead Free/RoHS Compliant Version (Note 2)
• "Green" Device, Note 3 and 4
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: See Table Below & Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
P/N R1 (NOM) R2 (NOM) MARKING
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
1K
2.2K
4.7K
10K
0.22K
1K
2.2K
3.3K
2.2K
4.7K
10K
0
1K
2.2K
4.7K
10K
4.7K
10K
10K
10K
OPEN
OPEN
OPEN
10K
N60
N61
N62
N63
N64
N65
N66
N67
N69
N70
N71
N72
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α 0° 8°
All Dimens mm ions in
Maximum Ratings @TA = 25°C unless otherwise specified
R1
OUT
B
C
E
R2
3
21
IN GND(0)
A
M
JL
ED
BC
H
K
G
Schematic and Pin Configuration
Characteristic Symbol Value Unit
Supply Voltage, (3) to (2) VCC 50 V
Input Voltage, (1) to (2) DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
VIN
-10 to +10
-10 to +12
-10 to +30
-10 to +40
-5 to +5
-5 to +10
-5 to +12
-6 to +20
V
Input Voltage, (2) to (1) DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
VEBO (MAX) 5 V
Output Current All IC 500 mA
Power Dissipation Pd 200 mW
Thermal Resistance, Junction to Ambient Air (Note 1) RθJA 625 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Characteristic Symbol Min Typ Max Unit Test Condition DDTD1 13EU 0.5 DDTD123EU 0.5 DDTDMSEU 0.5 DDTD1 MELJ 0.5 007012230 vrum 0‘5 7 7 v Vcc 7 5v, lo =1000A DDTDI t3zu 0.3 DDTD123YU 0.3 Inpuwokage DDTDt33Hu 0.3 DDTD1 13EU 3,0 DDTD123EU 3,0 DDTDMSEU 3,0 DDTD1 MELJ V 30 V 007012230 tan 7 7 3,0 DDTDI t3zu 2,0 DDTthavu 2,0 DDTD1 33HU 20 V0 7 0 3V Output VOHage VOW“ 7 7 0.3V V ‘O/‘t 7 50mAJ2.5mA DDTD1 13EU 7,2 DDTD123EU 3,3 DDTDMSEU 1,3 DDTD1 MELJ 0.53 Input Current 007012230 h 7 7 25 mA vr 7 5v DDTDI t3zu 7,2 DDTD123YU 3,0 DDTDt33Hu 24 Output Current lotom 7 7 05 “A Vcc 7 50V, V: = 0V DDTD1 13EU 33 DDTD123EU 39 DDTDMSEU 47 DDTD1 MELJ 50 DC Current earn 0070122le Gr 47 7 7 7 V0 7 5v. lo 7 SOmA DDTDI t3zu 5s DDTD123YU 5s DDTDt33Hu 5s GamrBandwtdth Product‘ tr 7 200 7 MHZ vCE 710v. \E 7 5mA,t7100MHz Characteristic Symbol Min Typ Max Unit Test Condition Col‘ectorrfiase Breakdown Vcnage BVCEO 50 7 7 V ‘C 7 500A Col‘ectorrEmmer Breakdown Voltage BVCEO 4D 7 7 V ‘C = 1mA EmttterrBase Breakdown Vottage DDTD123TU tg 7 50M DDTDMGTU 5v 5 V \E 7 sonA DDTD1 14m E30 7 7 \E 7 500A DDTD1 MGU \E 7 7200A Deflector Cum" Current two 7 7 0 5 0A Vega 7 50v DDTD123TU 7 0 5 DDTDMSTU 7 0 5 Emrtter Cutott Current DDTD‘ mu Igao 7 7 0 5 0A VEE 7 4v DDTD! MGU 300 580 Col‘ectorrEmmer Saturahon Voltage VCEtsafl 7 7 D 3 V ‘C 7 SDmA ‘3 7 2.5mA DDTD|23TU 100 250 600 DDTDMSTU 100 250 600 DC Current Transter Ram DDTDMTU tree ‘00 250 600 7 \C 7 5mA vCE 7 5v DDTD! meu 5s 7 7 GamrBandwtdth Product‘ tr 7 200 7 MHz vCE 710v \E 7 5m. t 7 100MHz
DS30382 Rev. 7 - 2
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Electrical Characteristics @TA = 25°C unless otherwise specified R1, R2 Types
Characteristic Symbol Min Typ Max Unit Test Condition
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
Vl(off)
0.5
0.5
0.5
0.5
0.5
0.3
0.3
0.3
⎯ ⎯ V VCC = 5V, IO = 100μA
Input Voltage
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
Vl(on) ⎯ ⎯
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
V
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 10mA
VO = 0.3V, IO = 30mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
Output Voltage VO(on) ⎯ ⎯ 0.3V V IO/Il = 50mA/2.5mA
Input Current
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
Il ⎯ ⎯
7.2
3.8
1.8
0.88
28
7.2
3.6
2.4
mA VI = 5V
Output Current IO(off) ⎯ ⎯ 0.5 μA VCC = 50V, VI = 0V
DC Current Gain
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
Gl
33
39
47
56
47
56
56
56
⎯ ⎯ ⎯ VO = 5V, IO = 50mA
Gain-Bandwidth Product* fT ⎯ 200 ⎯ MHz VCE = 10V, IE = 5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics @TA = 25°C unless otherwise specified R1-Only, R2-Only Types
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 50 ⎯ ⎯ V IC = 50μA
Collector-Emitter Breakdown Voltage BVCEO 40 ⎯ ⎯ V IC = 1mA
Emitter-Base Breakdown Voltage DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
BVEBO 5 ⎯ ⎯ V
IE = 50μA
IE = 50μA
IE = 50μA
IE = 720μA
Collector Cutoff Current ICBO ⎯ ⎯ 0.5 μA VCB = 50V
Emitter Cutoff Current
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
IEBO
⎯
⎯
⎯
300
⎯
0.5
0.5
0.5
580
μA VEB = 4V
Collector-Emitter Saturation Voltage VCE(sat) ⎯ ⎯ 0.3 V IC = 50mA, IB = 2.5mA
DC Current Transfer Ratio
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
hFE
100
100
100
56
250
250
250
⎯
600
600
600
⎯
⎯ IC = 5mA, VCE = 5V
Gain-Bandwidth Product* fT ⎯ 200 ⎯ MHz VCE = 10V, IE = -5mA, f = 100MHz
* Transistor - For Reference Only
Device Packaging Shipping DDTD! 13EU777F SOT7323 30001’Tape & Reel DDTD! 23EU777F SOT7323 30001’Tape & Reel DDTD|43EUV77F SOT7323 30001’Tape & Reel DDTD! 14EU777F SOT7323 30001’Tape & Reel DDTD122JUV77F SOT7323 30001’Tape & Reel DDTDI ISZUV7VF SOT7323 30001’Tape & Reel N><>< e="" year="" 2002="" 2003="" 2004="" 2005="" 2006="" 2007="" 2008="" 2009="" 2010="" 2011="" 2012="" code="" n="" p="" r="" s="" t="" u="" v="" w="" x="" v="" z="" mnnlh="" jan="" feb="" mar="" apr="" may="" jun="" jul="" aug="" sep="" on="" nov="" dec="" code="" 1="" 2="" 3="" 4="" 5="" 6="" 7="" 8="" 9="" o="" n="" d="">
Ordering Information (Note 4 & 5)
DS30382 Rev. 7 - 2
3 of 3
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Device Packaging Shipping
DDTD113EU-7-F SOT-323 3000/Tape & Reel
DDTD123EU-7-F SOT-323 3000/Tape & Reel
DDTD143EU-7-F SOT-323 3000/Tape & Reel
DDTD114EU-7-F SOT-323 3000/Tape & Reel
DDTD122JU-7-F SOT-323 3000/Tape & Reel
DDTD113ZU-7-F SOT-323 3000/Tape & Reel
SOT-323 3000/Tape & Reel
DDTD123YU-7-F
SOT-323 3000/Tape & Reel
DDTD133HU-7-F
SOT-323 3000/Tape & Reel
DDTD123TU-7-F
SOT-323 3000/Tape & Reel
DDTD143TU-7-F
SOT-323 3000/Tape & Reel
DDTD114TU-7-F
SOT-323 3000/Tape & Reel
DDTD114GU-7-F
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
NXX
YM
NXX = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.