TSM110NB04CR Datasheet by Taiwan Semiconductor Corporation

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TSM110NB04CR
Taiwan Semiconductor
1 Version: B1804
N-Channel Power MOSFET
40V, 54A, 11mΩ
FEATURES
● Low RDS(ON) to minimize conductive losses
● Low gate charge for fast power switching
● 100% UIS and Rg tested.
● 175°C Operating Junction Temperature
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● BLDC Motor Control
● Battery Power Management
● DC-DC converter
● Secondary Synchronous Rectification
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
40
V
RDS(on) (max)
VGS = 10V
11
mΩ
Qg
23
nC
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current (Note 1)
TC = 25°C
ID
54
A
TA = 25°C
12
Pulsed Drain Current
IDM
216
A
Single Pulse Avalanche Current (Note 2)
IAS
17
A
Single Pulse Avalanche Energy (Note 2)
EAS
43
mJ
Total Power Dissipation
TC = 25°C
PD
68
W
TC = 125°C
23
Total Power Dissipation
TA = 25°C
PD
3.1
W
TA = 125°C
1
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +175
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
2.2
°C/W
Junction to Ambient Thermal Resistance
RӨJA
48
°C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in2 pad of 2 oz copper.
_ TSM110NBO4CR samcounucm or ELECTRICAL SPECIFICATIONS
TSM110NB04CR
Taiwan Semiconductor
2 Version: B1804
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
40
--
--
V
Gate Threshold Voltage
VGS = VDS, ID = 250µA
VGS(TH)
2
3.2
4
V
Gate-Source Leakage Current
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Drain-Source Leakage Current
VGS = 0V, VDS = 40V
IDSS
--
--
1
µA
VGS = 0V, VDS = 40V
TJ = 125°C
--
--
100
Drain-Source On-State Resistance
(Note 3)
VGS = 10V, ID = 12A
RDS(on)
--
7.7
11
mΩ
Forward Transconductance (Note 3)
VDS = 10V, ID = 12A
gfs
--
37
--
S
Dynamic (Note 4)
Total Gate Charge
VGS = 10V, VDS = 20V,
ID = 12A
Qg
--
23
-
nC
Gate-Source Charge
Qgs
--
7
--
Gate-Drain Charge
Qgd
--
6
--
Input Capacitance
VGS = 0V, VDS = 20V
f = 1.0MHz
Ciss
--
1443
--
pF
Output Capacitance
Coss
--
147
--
Reverse Transfer Capacitance
Crss
--
80
--
Gate Resistance
f = 1.0MHz
Rg
0.6
1.9
3.8
Ω
Switching (Note 4)
Turn-On Delay Time
VGS = 10V, VDS = 20V,
ID = 12A, RG = 2Ω
td(on)
--
3.2
--
ns
Turn-On Rise Time
tr
--
20
--
Turn-Off Delay Time
td(off)
--
10
--
Turn-Off Fall Time
tf
--
12
--
Source-Drain Diode
Forward Voltage (Note 3)
VGS = 0V, IS = 12A
VSD
--
--
1.2
V
Reverse Recovery Time
IS = 12A ,
dI/dt = 100A/μs
trr
--
13
--
ns
Reverse Recovery Charge
Qrr
--
7
--
nC
Notes:
1. Silicon limited current only.
2. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 25Ω, IAS = 17A, Starting TJ = 25°C
3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
4. Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSM110NB04CR RLG
PDFN56
2,500pcs / 13” Reel
_ TSM110NBO4CR samcounucm - H/ / // / // 1 ‘fl/ / / // r_ —| | | \ / \ / \ / L
TSM110NB04CR
Taiwan Semiconductor
3 Version: B1804
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
R DS(on), Drain-Source On-Resistance (Ω)
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
Qg, Gate Charge (nC)
RDS(on), Drain-Source On-Resistance
(Normalized)
TJ, Junction Temperature (°C)
RDS(on), Drain-Source On-Resistance (Ω)
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
0
0.5
1
1.5
2
2.5
-75 -50 -25 025 50 75 100 125 150 175
VGS=10V
ID=12A
0
2
4
6
8
10
0 5 10 15 20 25
VDS=20V
ID=12A
0
10
20
30
40
0 1 2 3 4 5
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5.5V
VGS=5V
0.004
0.006
0.008
0.01
0.012
010 20 30 40
VGS=10V
0
0.02
0.04
0.06
0.08
0.1
5 6 7 8 9 10
ID=12A
0
8
16
24
32
40
0 1 2 3 4 5 6
25℃
-55℃
175℃
_ TSM110NBO4CR SEMICONDUGTO - t, Square Wave Pu‘se Duration (sec)
TSM110NB04CR
Taiwan Semiconductor
4 Version: B1804
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
BVDSS vs. Junction Temperature
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance, ZӨJC
t, Square Wave Pulse Duration (sec)
C, Capacitance (pF)
VDS, Drain to Source Voltage (V)
BVDSS (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature (°C)
IS, Reverse Drain Current (A)
VSD, Body Diode Forward Voltage (V)
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
0.8
0.9
1
1.1
1.2
-75 -50 -25 025 50 75 100 125 150 175
ID=5mA
0
200
400
600
800
1000
1200
1400
1600
1800
2000
010 20 30 40
CISS
COSS
CRSS
1
10
100
1000
0.1 1 10 100
RDS(ON)
SINGLE PULSE
RӨJC=2.2°C/W
T
C
=25°C
0.1
1
10
100
0.2 0.4 0.6 0.8 1 1.2
25℃ -55℃
175℃
0.01
0.1
1
10
0.0001 0.001 0.01 0.1
SINGLE PULSE
RӨJC=2.2°C/W
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
TAIWAN _ TSM110NBO4CR ——1 3.81 (REF) 1.— 1015 3.401015 6.20 :020 570mg L 4.21:015 .1 —~1 1:1 0.402.115 [025;015 i 1.101015 1-7 5.20:015 4—! ' -‘ 3.785 :0 17s i 0.51 1010 ® $1.00 (REF) 3.58 m 20 6.00:010 57mm 0.61 20 1o * <1 0.42="" 1:009="" .7="" i="" 0.13="" :007="" j="" .1="" 1.27="" 1550)="" 0.252005="" i1002n10="" 12="" (max‘="" [1%="" 4="" 90="" to="" w="" *4="" suggested="" pad="" layout="" marking="" diagram="" buzflfom="" """fi="" t="" o="" 1="" 1="" 4.52="" _="" gywwf="" ii="" [0.82="" 121d="" d="" d="" d’="" 141.271?="" 4="" p="" 0.60="">
TSM110NB04CR
Taiwan Semiconductor
5 Version: B1804
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN56
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
G
= Halogen Free
Y
= Year Code
WW
= Week Code (01~52)
F
= Factory Code
TSC
110NB04
GYWWF
TSC
110NB04
GYWWF
$_ TSM110NBO4CR SEMICONDUCTOR
TSM110NB04CR
Taiwan Semiconductor
6 Version: B1804
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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