DSEC60-06A Datasheet by IXYS

DSEC60-06A
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Common Cathode
HiPerFRED
1 2 3
Part number
DSEC60-06A
Backside: cathode
FAV
rr
t ns35
RRM
30
600
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20160922aData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
L-I IXYS C60-06A Symbol Delinikion Condifions min. lyp. max. iUniI
DSEC60-06A
ns
6 A
T
VJ
= °C
reverse recovery time
A10
35
100
ns
I
RM
max. reverse recovery current
I
F
= A;30
25
T = 100°C
VJ
-di
F
= A/µs200/dt
t
rr
V
R
= V300
T
VJ
= °C25
T = 100°C
VJ
V = V
Symbol
Definition
Ratings
typ.
I
R
V
IA
V
F
1.60
R0.9 K/W
R
min.
30
V
RSM
V
250T = 25°C
VJ
T = °C
VJ
mA1V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
135
P
tot
165 WT = 25°C
C
RK/W
30
600
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
1.91
T = 25°C
VJ
150
V
F0
V
0.91T = °C
VJ
175
r
F
8.7
mΩ
V
1.25T = °C
VJ
I = A
F
V
30
1.52
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V
600
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
26
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
175
250 A
600
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
600
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20160922aData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
L-I IXYS C60-06A T0-247 Symbol Delinikion Condifions min. lyp. max. 3 Unit V: 1 uc Ma ing m U
DSEC60-06A
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly Code
Zyyww
Assembly Line
XXXXXXXXX
DSEC59-06BC ISOPLUS220AB (3) 600
Package
T
op
°C
M
D
Nm1.2
mounting torque
0.8
T
VJ
°C175
virtual junction temperature
-55
Weight g6
Symbol
Definition
typ.
min.
Conditions
operation temperature
Unit
F
C
N120
mounting force with clip
20
I
RMS
RMS current
70 A
per terminal
150-55
DHG60C600HB TO-247AD (3) 600
TO-247
Similar Part Package Voltage class
DSEC60-06B TO-247AD (3) 600
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
1)
DSEC60-06A 473235Tube 30DSEC60-06AStandard
T
stg
°C150
storage temperature
-55
threshold voltage
V0.91
mΩ
V
0 max
R
0 max
slope resistance *
6.1
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Fast
Diode
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20160922aData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
C60-06A
DSEC60-06A
S
ØPØ P1 D2
D1
E1
4
1 2 3
L
L1
2x b2
3x b
b4
2x e
2x E2
D
E
Q
A
A2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
1 2 3
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20160922aData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
L-I IXYS C60-06A
DSEC60-06A
200 600 10000 400 800
70
80
90
100
110
120
130
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
t
0 200 400 600 800 1000
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
200 600 10000 400 800
0
10
20
30
40
50
100 1000
0
500
1000
1500
2000
2500
3
000
0.0 0.5 1.0 1.5 2.0
0
10
20
30
40
50
60
7
0
K
f
T
VJ
[°C]
t [s]
V
FR
[V]
I
RM
[A]
Q
r
[µC]
I
F
[A]
V
F
[V] -di
F
/dt [A/µs]
t
rr
[ns]
Z
thJC
[K/W]
-di
F
/dt [A/µs]
-di
F
/dt [A/µs] -di
F
/dt [A/µs]
V
FR
t
rr
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
r
versus -di
F
/dt Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal impedance junction to case
t
fr
[µs]
I
RM
Q
r
T
VJ
= 100°C
V
R
= 300 V
T
VJ
= 100°C
V
R
= 300 V
T
VJ
= 100°C
V
R
= 300 V
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
T
VJ
= 100°C
I
F
= 30 A
T
VJ
= 150°C
100°C
25°C
Constants for Z
thJC
calculation:
i R
thi
(K/W) t
i
(s)
1 0.030 0.001
2 0.080 0.030
3 0.300 0.006
4 0.490 0.060
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20160922aData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved