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ADXRS646-EP Datasheet by Analog Devices Inc.
ANALOG
DEVICES
High Stability, Low Noise
Vibration Rejecting Yaw Rate Gyroscope
Enhanced Product ADXRS646-EP
Rev. A Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2012–2015 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
12°/hr bias stability
Z-axis (yaw rate) response
0.01°/√sec angle random walk
High vibration rejection over wide frequency
Measurement range extendable to a maximum of ±450°/sec
10,000 g powered shock survivability
Ratiometric to referenced supply
6 V single-supply operation
Self-test on digital command
Ultrasmall and light (<0.15 cc, <0.5 gram)
Temperature sensor output
Complete rate gyroscope on a single chip
RoHS compliant
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications
Extended industrial temperature range (−55°C to +105°C)
Controlled manufacturing baseline
1 assembly/test site
1 fabrication site
Enhanced product change notification
Qualification data available on request
APPLICATIONS
Industrial applications
Severe mechanical environments
Platform stabilization
GENERAL DESCRIPTION
The ADXRS646-EP is a high performance angular rate sensor
(gyroscope) that offers excellent vibration immunity. Bias stability
is a widely recognized figure of merit for high performance gyro-
scopes, but in real-world applications, vibration sensitivity is
often a more significant performance limitation and should be
considered in gyroscope selection. The ADXRS646-EP offers
superior vibration immunity and acceleration rejection as well
as a low bias drift of 12°/hr (typical), enabling it to offer rate sens-
ing in harsh environments where shock and vibration are present.
The ADXRS646-EP is manufactured using the Analog Devices,
Inc., patented high volume BiMOS surface-micromachining
process. An advanced, differential, quad sensor design provides
the improved acceleration and vibration rejection. The output
signal, RATEOUT, is a voltage proportional to angular rate about
the axis normal to the top surface of the package. The measure-
ment range is a minimum of ±250°/sec. The output is ratiometric
with respect to a provided reference supply. Other external capaci-
tors are required for operation.
A temperature output is provided for compensation techniques.
Two digital self-test inputs electromechanically excite the sensor
to test proper operation of both the sensor and the signal condi-
tioning circuits.
The ADXRS646-EP is available in a 7 mm × 7 mm × 3 mm CBGA
chip-scale package. Additional application and technical infor-
mation can be found in the ADXRS646-EP data sheet.
FUNCTIONAL BLOCK DIAGRAM
V
DD
AGND
PGND
AV
CC
ST2 ST1 TEMP V
RATIO
R
OUT
CP1 CP2 CP3 CP4 CP5 SUMJ RATEOUT
DEMOD
180kΩ ±1%
22nF
100nF
22nF
100nF
100nF
100nF
DRIVE
AMP
MECHANICAL
SENSOR
CHARGE PUMP
AND VOLTAGE
REGULATOR
C
OUT
6V
6V
3V TO 6V
(ADC REF)
AC
AMP
VGA
25kΩ
@ 25°C
ADXRS646-EP
25kΩ
SELF-TEST
10046-001
Figure 1.
ADXRS646-EP Enhanced Product
TABLE OF CONTENTS
Features .............................................................................................. 1
Enhanced Product Features ............................................................ 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................4
Rate Sensitive Axis ........................................................................4
ESD Caution...................................................................................4
Pin Configuration and Function Descriptions ..............................5
Typical Performance Characteristics ..............................................6
Outline Dimensions ..........................................................................9
Ordering Guide .............................................................................9
REVISION HISTORY
4/15—Rev. 0 to Rev. A
Change to Features Section ............................................................. 1
10/12—Revision 0: Initial Version
Rev. A | Page 2 of 12
Table L
Enhanced Product ADXRS646-EP
SPECIFICATIONS
All minimum and maximum specifications are guaranteed. Typical specifications are not guaranteed.
TA = 25°C, VS = AVCC = VDD = 6 V, V RATIO = AVCC, angular rate = 0°/sec, bandwidth = 80 Hz (COUT = 0.01 µF), IOUT = 100 µA, ±1 g, unless
otherwise noted.
Table 1.
Parameter Test Conditions/Comments Min Typ Max Unit
SENSITIVITY1 Clockwise rotation is positive output
Measurement Range2 Full-scale range over specifications range ±250 ±300 °/sec
Initial 8.5 9 9.5 mV/°/sec
Temperature Drift3 ±3 %
Nonlinearity Best fit straight line 0.01 % of FS
NULL1
Null −40°C to +105°C 2.7 3.0 3.3 V
Temperature Drift3 ±3 °/sec
Linear Acceleration Effect Any axis 0.015 °/sec/g
Vibration Rectification 25 g rms, 50 Hz to 5 kHz 0.0001 °/sec/g2
NOISE PERFORMANCE
Rate Noise Density TA ≤ 25°C 0.01 °/sec/√Hz
Rate Noise Density TA ≤ 105°C 0.015 °/sec/√Hz
Resolution Floor TA = 25
°
C, 1 minute to 1 hour in-run 12 °/hr
FREQUENCY RESPONSE
Bandwidth4 ±3 dB user adjustable up to specification 1000 Hz
Sensor Resonant Frequency 15.5 17.5 20 kHz
SELF-TEST1
ST1 RATEOUT Response ST1 pin from Logic 0 to Logic 1 −50 °/sec
ST2 RATEOUT Response ST2 pin from Logic 0 to Logic 1 50 °/sec
ST1 to ST2 Mismatch5 −5 ±0.5 +5 %
Logic 1 Input Voltage ST1 pin or ST2 pin 4 V
Logic 0 Input Voltage 2 V
Input Impedance
ST1 pin or ST2 pin to common
40
50
100
kΩ
TEMPERATURE SENSOR1
VOUT at 25°C Load = 10 MΩ 2.8 2.9 3.0 V
Scale Factor6 25°C, VR ATIO = 6 V 10 mV/°C
Load to VS 25 kΩ
Load to Common 25 kΩ
TURN-ON TIME6 Power on to ±0.5°/sec of final with CP5 = 100 nF 50 ms
OUTPUT DRIVE CAPABILITY
Current Drive For rated specifications 200 µA
Capacitive Load Drive
1000
pF
POWER SUPPLY
Operating Voltage (VS) 5.75 6.00 6.25 V
Quiescent Supply Current 4 mA
TEMPERATURE RANGE
Specified Performance −55 +105 °C
1 Parameter is linearly ratiometric with VRATIO.
2 Measurement range is the maximum range possible, including output swing range, initial offset, sensitivity, offset drift, and sensitivity drift at 5 V supplies.
3 From +25°C to −40°C or +25°C to +105°C.
4 Adjusted by external capacitor, COUT. Reducing bandwidth below 0.01 Hz does not result in further noise improvement.
5 Self-test mismatch is described as (ST2 + ST1)/((ST2 − ST1)/2).
6 Based on characterization.
Rev. A | Page 3 of 12
ESD (elenmstalic dismarge) sen ve device‘
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wwham daemon Although m mam mum
paxemed ov pvoprlelavy proxemon (chllry, damage
may occuv on dame: subjeded w hlgh enevgy ESD
Therefore, pvopev ESD pvezaunom should be mken (o
avmd peyimmance degvadanon 01 ‘05: of funcnonamy
ADXRS646-EP Enhanced Product
Rev. A | Page 4 of 12
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Acceleration (Any Axis, 0.5 ms)
Unpowered 10,000 g
Powered 10,000 g
VDD, AVCC −0.3 V to +6.6 V
VRATIO AVCC
ST1, ST2 AVCC
Output Short-Circuit Duration
(Any Pin to Common)
Indefinite
Operating Temperature Range −65°C to +125°C
Storage Temperature Range −65°C to +150°C
Stresses at or above those listed under the Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Drops onto hard surfaces can cause shocks of greater than
10,000 g and can exceed the absolute maximum rating of the
device. Care should be exercised in handling to avoid damage.
RATE SENSITIVE AXIS
This is a Z-axis rate-sensing device (also called a yaw rate-
sensing device). It produces a positive going output voltage
for clockwise rotation about the axis normal to the package
top, that is, clockwise when looking down at the package lid.
R
A
TE
AXIS
LONGITUDINAL
AXIS
LATERAL AXIS
+
ABCD G1
7
EF
A1
RATE OUT
RATE IN
4.75V
0.25V
AVCC = 5V
VRATIO/2
GND
10046-002
Figure 2. RATEOUT Signal Increases with Clockwise Rotation
ESD CAUTION
@0000
o 000
OO
00 @
OO
000
A @0000
0/
0/
oo
00
oo
oi}
Enhanced Product ADXRS646-EP
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
PGND
ST1
ST2
TEMP
AGND V
RATIO
DNC SUMJ RATEOUT
AV
CC
CP2
CP1
CP4
CP3
CP5V
DD
GF E D C BA
7
6
5
4
3
2
1
NOTES
1. DNC = DO NOT CONNECT TO THIS PIN.
BOTTOM VIEW
10046-003
Figure 3. Pin Configuration
Table 3. Pin Function Descriptions
Pin No. Mnemonic Description
6D, 7D CP5 HV Filter Capacitor, 100nF (±5%).
6A, 7B CP4 Charge Pump Capacitor, 22 nF (±5%).
6C, 7C
CP3
Charge Pump Capacitor, 22 nF (±5%).
5A, 5B CP1 Charge Pump Capacitor, 22 nF (±5%).
4A, 4B CP2 Charge Pump Capacitor, 22 nF (±5%).
3A, 3B AVCC Positive Analog Supply.
1B, 2A RATEOUT Rate Signal Output.
1C, 2C SUMJ Output Amp Summing Junction.
1D, 2D DNC Do Not Connect to this Pin.
1E, 2E VRAT IO Reference Supply for Ratiometric Output.
1F, 2G AGND Analog Supply Return.
3F, 3G TEMP Temperature Voltage Output.
4F, 4G ST2 Self-Test for Sensor 2.
5F, 5G ST1 Self-Test for Sensor 1.
6G, 7F PGND Charge Pump Supply Return.
6E, 7E VDD Positive Charge Pump Supply.
Rev. A | Page 5 of 12
ADXRS646-EP Enhanced Product
TYPICAL PERFORMANCE CHARACTERISTICS
N > 1000 for all typical performance plots, unless otherwise noted.
30
0
5
10
15
20
25
PERCENT OF POPULATION (%)
RATEOUT (V)
2.75
2.80
2.85
2.90
2.95
3.00
3.05
3.10
3.15
3.20
3.25
10046-004
Figure 4. Null Bias at 25°C
30
0
5
10
15
20
25
PERCENT OF POPULATION (%)
DRIFT (°/sec/°C)
–0.30
–0.25
–0.20
–0.15
–0.10
–0.05
0
0.05
0.10
0.15
0.20
0.25
0.30
10046-005
Figure 5. Null Drift over Temperature (VRATIO = 5 V)
3.5
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
NULL (V)
TEMPERATURE (°C)
–60 –40 –20 020 40 60 80 100 120 140
10046-100
Figure 6. Null Output over Temperature, 16 Parts in Sockets (VRATIO = 5 V)
35
30
25
20
15
10
5
0
PERCENT OF POPULATION (%)
SENSITIVITY (mV/°/sec)
8.5 8.6 8.7 8.8 8.9 9.0 9.1 9.2 9.3 9.4 9.5
10046-010
Figure 7. Sensitivity at 25°C
40
35
30
25
20
15
10
5
0
PERCENT OF POPULATION (%)
PERCENT DRIFT (%)
–10 –8 –6 –4 –2 0246810 12 14 16 18 20
10046-011
Figure 8. Sensitivity Drift over Temperature
10046-012
1k
100
1
10
ROOT ALLAN DEVIATION (°/Hour rms)
AVERAGING TIME (Seconds)
0.01 0.1 110 100 1k
Figure 9. Typical Root Allan Deviation at 25°C vs. Averaging Time
Rev. A | Page 6 of 12
25
25
I715
m
. 22m
.2 S;
Enhanced Product ADXRS646-EP
25
0
5
10
15
20
PERCENT OF POPULATION (%)
ST1Δ (mV)
–650
–630
–610
–590
–570
–550
–530
–510
–490
–470
–450
–430
–410
–390
–370
–350
10046-006
Figure 10. ST1 Output Change at 25°C (VRATIO = 5 V)
–0.30
–0.35
–0.40
–0.45
–0.50
–0.55
–0.60
–0.65
–0.70
–0.75
ST1Δ (V)
TEMPERATURE (°C)
–60 –40 –20 020 40 60 80 100 120 140
10046-104
Figure 11. ST1 Output Change vs. Temperature, 16 Parts in Sockets
70
60
50
40
30
20
10
0
PERCENT OF POPULATION (%)
MISMATCH (%)
–4 –3 –2 –1 01234
10046-008
Figure 12. Self-Test Mismatch at 25°C (VRATIO = 5 V)
25
0
5
10
15
20
PERCENT OF POPULATION (%)
ST2Δ (mV)
350
370
390
410
430
450
470
490
510
530
550
570
590
610
630
650
10046-007
Figure 13. ST2 Output Change at 25°C (VRATIO = 5 V)
0.75
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
ST2Δ (V)
TEMPERATURE (°C)
–60 –40 –20 020 40 60 80 100 120 140
10046-103
Figure 14. ST2 Output Change vs. Temperature, 16 Parts in Sockets
9
–18
–15
–12
–9
–6
–3
0
3
6
0
–90
–80
–70
–60
–50
–40
–30
–20
–10
MAGNITUDE RESPONSE (dB)
PHASE RESPONSE (Degrees)
FREQUENCY (kHz)
0.1 110
C
OUT
= 470pF
MAGNITUDE
PHASE
10046-101
Figure 15. ADXRS646-EP Frequency Response with a 2.2 kHz Output Filter
Rev. A | Page 7 of 12
an
35
ADXRS646-EP Enhanced Product
80
70
60
50
40
30
20
10
0
PERCENT OF POPULATION (%)
V
TEMP
OUTPUT (V)
2.70
2.75
2.80
2.85
2.90
2.95
3.00
3.05
3.10
3.15
3.20
3.25
3.30
10046-009
Figure 16. VTEMP Output at 25°C (VRATIO = 5 V)
4.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
TEMP
(V)
TEMPERATURE (°C)
–100 –50 050 100 150
10046-102
Figure 17. VTEMP Output vs. Temperature
35
30
25
20
15
10
5
0
PERCENT OF POPULATION (%)
CURRENT CONSUMPTION (mA)
2.8 2.9 3.0 3.1 3.2 3.3 3.4
10046-013
Figure 18. Current Consumption at 25°C (VRATIO = 5 V)
Rev. A | Page 8 of 12
c max
Enhanced Product ADXRS646-EP
Rev. A | Page 9 of 12
OUTLINE DIMENSIONS
A
B
C
D
E
F
G
76543
TOP VIEW
3.80 MAX
DETAIL A
BALL DIAMETER
0.60
0.55
0.50
0.60 MAX
0.25 MIN
COPLANARITY
0.15
21
*A1 CORNER
INDEX AREA
3.20 MAX
2.50 MIN
*BALL A1 IDENTIFIER IS GOLD PLATED AND CONNECTED
TO THE D/A PAD INTERNALLY VIA HOLES.
7.05
6.85 SQ
6.70
A1 BALL
C
ORNE
R
BOTTOM VIEW
DETAIL A
0.80
BSC
4.80
BSC SQ
SEATING
PLANE
07-11-2012-B
Figure 19. 32-Lead Ceramic Ball Grid Array [CBGA]
(BG-32-3)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option
ADXRS646TBGZ-EP −55°C to +105°C 32-Lead Ceramic Ball Grid Array [CBGA] BG-32-3
ADXRS646TBGZ-EP-RL −55°C to +105°C 32-Lead Ceramic Ball Grid Array [CBGA] BG-32-3
1 Z = RoHS Compliant Part.
ADXRS646-EP Enhanced Product
NOTES
Rev. A | Page 10 of 12
Enhanced Product ADXRS646-EP
NOTES
Rev. A | Page 11 of 12
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