TLP3061,62,63(S) Datasheet by Toshiba Semiconductor and Storage

TOSHIBA 4 6 “2,025 g; 752:025i a u m Approved No. 40009302 Maximum operating insulation voltage: 890th El II Highest permissible over voltage: S000VPK \ (Nole).When a EN60747-5-2 approved type is needed, please designaie me "Opfion (D4)" 3 . Cunstructiun mechanical rating 1:Anode 7 62 mm plch 10.15 mm won 2; Camode Slandard Type TLPxxxxF type 3. N c Creepage Distance 7 0 mm {Mint 5 0 mm {Mint 4:Termma\ 1 Clearance 70mm1Mmb BOmthmb . Insuiauon Thickness 0 5 mm {Mint 0 5 mm {Mint 6-Te'm‘”a‘ 2 ZC.Zero-cmss Cir 1 2007—10-01
TLP3061(S),TLP3062(S),TLP3063(S)
2007-10-01
1
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC
TLP3061(S),TLP3062(S),TLP3063(S)
OFFICE MACHINE
HOUSEHOLD USE EQUIPMENT
TRIAC DRIVER
SOLID STATE RELAY
The TOSHIBA TLP3061 (S), TLP3062 (S), TLP3063 (S) consist of a zero
voltage crossing turn-on photo-triac optically coupled to a gallium
arsenide infrared emitting diode in a six lead plastic DIP package.
• Peak Off-State Voltage : 600 V (min)
• Trigger LED Current : 15 mA (max) (TLP3061(S))
10 mA (max) (TLP3062(S))
5 mA (max) (TLP3063(S))
• On-State Current : 100 mA (max)
• Isolation Voltage : 5000 Vrms (min)
• UL Recognized : UL1577, File No. E67349
• SEMKO Approved : SS EN60065
SS EN60950, File No.9841113
• BSI Approved : BS EN60065, File No.8385
BS EN60950, File No.8386
• Option (D4) type
VDE approved: DIN EN60747-5-2
Approved No. 40009302
Maximum operating insulation voltage: 890VPK
Highest permissible over voltage: 8000VPK
(Note):When a EN60747-5-2 approved type is needed,
please designate the "Option (D4)"
• Construction mechanical rating
7.62 mm pich
Standard Type
10.16 mm pich
TLPxxxxF type
Creepage Distance
Clearance
Insulation Thickness
7.0 mm (Min)
7.0 mm (Min)
0.5 mm (Min)
8.0 mm (Min)
8.0 mm (Min)
0.5 mm (Min)
JEDEC ―
JEITA ―
TOSHIBA 11-7A9
weight: 0.39g (typ.)
Unit: mm
1: Anode
2: Cathode
3: N.C.
4:Terminal 1
6:Terminal 2
ZC:Zero-cross Circuit
1
2
34
6
ZC
Pin Configuration
(top view)
TOSHIBA 2007-10-01
TLP3061(S),TLP3062(S),TLP3063(S)
2007-10-01
2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF 50 mA
Forward current derating (Ta ≥ 53°C) ΔIF / °C −0.7 mA / °C
Peak forward current
(100 μs pulse, 100 pps) IFP 1 A
Power dissipation PD 100 mW
Power dissipation derating (Ta ≥ 25°C) ΔPD / °C −1.0 mW / °C
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Off−state output terminal voltage VDRM 600 V
Ta = 25°C 100
On−state RMS current Ta = 70°C IT(RMS) 50 mA
On−state current derating (Ta ≥ 25°C) ΔIT / °C −1.1 mA / °C
Peak on−state current
(100μs pulse, 120 pps) ITP 2 A
Peak nonrepetitive surge
current (Pw = 10 ms, DC = 10%) ITSM 1.2 A
Power dissipation PD 300 mW
Power dissipation derating (Ta ≥ 25°C) ΔPD / °C −4.0 mW / °C
Detector
Junction temperature Tj 115 °C
Storage temperature range Tstg −55~150 °C
Operating temperature range Topr −40~100 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissipation PT 330 mW
Total package power dissipation derating
(Ta ≥ 25°C) ΔPT / °C −4.4 mW / °C
Isolation voltage
(AC, 1 min., R.H.≤ 60%) (Note 1) BVS 5000 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4 and 6 shorted
together.
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VAC ― ― 240 Vac
Forward current IF* 15 20 25 mA
Peak on−state current ITP ― ― 1 A
Operating temperature Topr −25
― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
※ In the case of TLP3062
TOSHIBA “PM :3 ML: dv I m (c) 2007-10-01
TLP3061(S),TLP3062(S),TLP3063(S)
2007-10-01
3
Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF I
F = 10 mA 1.0 1.15 1.3 V
Reverse current IR V
R = 5 V ― ― 10 μA
LED
Capacitance CT V = 0, f = 1 MHz ― 10 ― pF
Peak off−state current IDRM V
DRM = 600 V ― 10 1000 nA
Peak on−state voltage VTM I
TM = 100 mA ― 1.7 3.0 V
Holding current IH ― ― 0.6 ― mA
Critical rate of rise of
off−state voltage dv / dt Vin = 240 Vrms, Ta = 85°C
(Fig.1) 200 500 ― V / μs
Detector
Critical rate of rise of
commutating voltage dv / dt (c) Vin = 60 Vrms, IT = 15mA
(Fig.1) ― 0.2 ― V / μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
TLP3061(S) ― ― 15
TLP3062(S) ― 5 10
Trigger LED current
TLP3063(S)
IFT V
T = 6 V
― ― 5
mA
Inhibit voltage VIH I
F = rated IFT ― ― 50 V
Leakage in inhibited state IIH IF = rated IFT
VT = rated VDRM ― 100 300 μA
Capacitance input to output CS V
S = 0, f = 1 MHz ― 0.8 ― pF
Isolation resistance RS V
S = 500 V (R.H.≤ 60%) 5×1010 1014 ― Ω
AC, 1 minute 5000 ― ―
AC, 1 second, in oil ― 10000 ―
Vrms
Isolation voltage BVS
DC, 1 minute, in oil ― 10000 ― V
dc
Fig. 1 dv / dt test circuit
＋5V,VCC
dv / dt（c）
0V
Vin
dv / dt
～
Rin
RL
4kΩ
1
2
3
6
4
VCC 120Ω
+
−
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TLP3061(S),TLP3062(S),TLP3063(S)
2007-10-01
4
Ambient temperature Ta (℃)
Allowable forward current
I
F (mA)
IF – Ta
0
120 100 80 60 40 20 0
－20
10
20
30
40
50
60
Ambient temperature Ta (℃)
R.M.S. on-state current
IT(RMS) (mA)
IT(RMS) – Ta
0
120 100 80 60 40 20 0
－20
20
40
60
80
100
120
IFP – DR
Allowable pulse forward current
I
FP (mA)
Duty cycle ration DR
100
3 10－1 3 10－2 3 10－3
3
10
30
50
100
300
500
3000
1000
Pulse width≦100μs
Ta＝25℃
IF – VF
Ta＝25℃
Forward current IF (mA)
Forward voltage VF（V)
1.8
1.6 1.4 1.2 1.0
0.8 0.6
0.1
0.3
0.5
1
10
30
100
50
5
3
Pulse forward current IFP (mA)
I
FP – VFP
Pulse forward voltage VFP (V)
Pulse width≦10μs
Repetitive frequency
=100Hz
Ta=25 ℃
1
3.0
2.6
1.8
1.4
1.0 0.6
3
5
10
30
300
500
1000
2.2
50
100
Forward voltage temperature
coefficient ΔVF / ΔTa ( m V / ℃)
ΔVF / ΔTa – IF
50 30 5
3 1 0.5 0.3 0.1 10
－0.4
－0.8
－1.2
－1.6
－2.0
－2.4
－2.8
－3.2
Forward current IF (mA)
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TLP3061(S),TLP3062(S),TLP3063(S)
2007-10-01
5
Ambient temperature Ta (℃)
Off-state output terminal voltage
V DRM（Arbitrary unit）
Normalized VDRM － Ta
100
20
－40 －20 0 40 60 80
0.6
0.2
0.8
0.4
1.0
1.2
1.4
Ambient temperature Ta (℃)
Holding current IH
（Arbitrary unit）
Normalized IH － Ta
100
20
－40 －20 0 40 60 80
0.3
0.1
0.5
1
1.2
2
3
Ambient temperature Ta (℃)
Trigger LED current IFT
（Arbitrary unit）
Normalized IFT － Ta
VT=3V
100
20
－40 －20 0 40 60 80
0.3
0.1
0.5
1
1.2
2
3
Peak off-state current IDRM
（Arbitrary unit）
Normalized IDRM － Ta
VDRM=Rated
100
40
0 20 60 80
100
101
102
103
Ambient temperature Ta (℃)
Inhibit Current IIH
（Arbitrary unit）
Normalized IIH － Ta
100
20
－40 －20 0 40 60 80
0.3
0.1
0.5
1
1.2
2
3
IF ＝ Rated IFT
VT ＝ Rated VDRM
Ambient temperature Ta (℃)
Inhibit voltage VIH
（Arbitrary unit）
Normalized VIH － Ta
IF ＝ Rated IFT
Ambient temperature Ta (℃)
100
20
－40 －20 0 40 60 80
0.3
0.1
0.5
1
1.2
2
3
TOSHIBA 2007-10-01
TLP3061(S),TLP3062(S),TLP3063(S)
2007-10-01
6
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