AOD2908 Datasheet by Alpha & Omega Semiconductor Inc.

ALPHA&0MEGA SEMICONDUCTOR Gawrsource Vo‘lage VGE :20 V
AOD2908
100V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 52A
R
DS(ON)
(at V
GS
=10V) < 13.5mΩ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
V
GS
The AOD2908 uses Trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of R
DS(ON)
, Ciss and Coss. This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
100V
Drain-Source Voltage 100
Maximum
V
±2
0
Gate-Source Voltage
G
D
S
TO252
DPAK
TopView Bottom View
D
D
S
S
D
V
GS
I
DM
I
DM
I
AS
E
AS
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Pulsed Drain Current
J
150
A
36
75
20
A
T
A
=70°C
20
I
D
W
T
C
=25°C
T
C
=100°C
mJ
Avalanche Current
C
7
37
120
Maximum Junction-to-Case
Pulsed Drain Current
I
Continuous Drain
Current
Power Dissipation
A
20
T
C
=100°C
Power Dissipation
B
P
D
-55 to 175
52
Avalanche energy L=0.1mH
C
Continuous Drain
Current I
DSM
9
°C/W
°C/W
Maximum Junction-to-Ambient
A D
1.5
50
2
W
T
A
=70°C 1.6
T
A
=25°C 2.5
P
DSM
A
T
A
=25°C
V
±2
0
Gate-Source Voltage
T
C
=25°C
°C
Thermal Characteristics
Parameter Typ Max Units
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
A
°C/W
R
θJA
15
41
Rev 1 : Mar. 2012
www.aosmd.com Page 1 of 6
ALPHA & OMEGA EJIIC ND UC TOR ‘mam TuerW Delaynme
AOD2908
Symbol Min Typ Max Units
BV
DSS
100 V
V
DS
=100V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 2.7 3.3 4.1 V
I
D(ON)
120 A
I
D(ON)
150 A
11 13.5
T
J
=125°C 18 23
g
FS
30 S
V
SD
0.7 1 V
I
S
70 A
C
iss
1250 1670 pF
C
oss
727 970 pF
C
rss
25 43 pF
R
g
2 3 Ω
Q
g
(10V) 19 27 nC
Q
gs
5.5 nC
Q
gd
6 nC
t
D(on)
7.5 ns
t
r
14 ns
t
D(off)
15
ns
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
µA
Zero Gate Voltage Drain Current
mΩ
On state drain current V
GS
=10V, V
DS
=5V,PW=260µs
V
GS
=10V, I
D
=20A
Gate-Body leakage current
V
DS
=V
GS，
I
D
=250µA
V
DS
=0V, V
GS
=±20V
On state drain current V
GS
=10V, V
DS
=5V,PW=1µs
Forward Transconductance
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=50V, R
L
=2.5Ω,
R
GEN
=3
Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
Diode Forward Voltage
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
V
GS
=10V, V
DS
=50V, I
D
=20A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=50V, f=1MHz
Turn-On DelayTime
DYNAMIC PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
t
D(off)
15
ns
t
f
14 ns
t
rr
39 ns
Q
rr
140 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-Off DelayTime
R
GEN
=3
Ω
Turn-Off Fall Time
I
F
=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PDis based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I: The IDM is obtained using 260µs pulses.
J: The IDM is obtained using 1µs pulses.
Rev 1 : Mar. 2012 www.aosmd.com Page 2 of 6
ALPHA & OMEGA SEMICONI) UC’I'OR // (Mole E)
AOD2908
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
20
40
60
80
100
2345678
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
8
10
12
14
16
18
20
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=10V
I
D
=20A
25°C
125°C
V
DS
=5V
VGS=10V
0
20
40
60
80
100
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6V
7V
10V
Vgs=5V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
8
16
24
32
40
5 6 7 8 9 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev 1 : Mar. 2012 www.aosmd.com Page 3 of 6
ALPHA&0MEGA SEMICONDUCTOR Cu; \ 1 ~ \— AM ("me F) Figure 10: Single Pulse Power filling Juncflon-lo-Cue
AOD2908
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 4 8 12 16 20
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
400
800
1200
1600
2000
0 20 40 60 80 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
200
400
600
800
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
Coss
C
rss
VDS=50V
ID=20A
TJ(Max)=175°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
10
µ
s
10ms
1ms
DC
RDS(ON)
TJ(Max)=175°C
TC=25°C
100
µ
s
40
for (Note F)
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Area (Note F)
RθJC=2°C/W
Rev 1 : Mar. 2012 www.aosmd.com Page 4 of 6
ALPHA&0MEGA SEMICONDUCTOR Ill.“ Flgure 19: slngle Pulse Avalanche capabllny Flgure an: slngle Pulse Power Rating Juncllon-n‘»
AOD2908
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
30
60
90
120
0 25 50 75 100 125 150 175
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 18: Power De-rating (Note F)
0
20
40
60
80
0 25 50 75 100 125 150 175
Current rating ID(A)
TCASE (°
°°
°C)
Figure 17: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 20: Single Pulse Power Rating Junction
-
to
-
TA=25°C
10
100
1 10 100
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 19: Single Pulse Avalanche capability
TA=25°C
TA=150°C
TA=100°C
TA=125°C
40
0.001
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 21: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 20: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
RθJA=60°C/W
Figure 19: Single Pulse Avalanche capability
(Note C)
Rev 1 : Mar. 2012 www.aosmd.com Page 5 of 6
?
AOD2908
AOW298
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev 1 : Mar. 2012 www.aosmd.com Page 6 of 6