Transistorer – FET'er, MOSFET'er – Arrays

Resultater : 5.106
Producenter
Advanced Linear Devices Inc.Alpha & Omega Semiconductor Inc.Analog Devices Inc.Analog Devices Inc./Maxim IntegratedCentral Semiconductor CorpComchip TechnologyDComponentsDiodes IncorporatedEPCFairchild SemiconductorGeneral ElectricGeneSiC SemiconductorGoford Semiconductor
Ryd
Serie
-*AlphaMOSAutomotive, AEC-Q101Automotive, AEC-Q101, HEXFET®Automotive, AEC-Q101, OptiMOS™Automotive, AEC-Q101, PowerTrench®Automotive, AEC-Q101, SIPMOS®Automotive, AEC-Q101, STripFET™Automotive, AEC-Q101, STripFET™ F6Automotive, AEC-Q101, STripFET™ F7Automotive, AEC-Q101, STripFET™ IIAutomotive, AEC-Q101, STripFET™ III
Ryd
Emballage
-Afskåret tape (CT)BakkeBoksBulkDigi-Reel®RørTape & Reel (TR)
Ryd
Delstatus
AktivForældetFås ikke længere hos Digi-KeyIkke til nye designLast Time Buy
Ryd
FET-type
2 N- og 2 P-kanal (H-bro)2 N- og 2 P-kanal matchende par2 N- og 2 P-kanal2 N-kanal (dobbelt Buck Chopper)2 N-kanal (dobbelt) asymmetrisk2 N-kanal (dobbelt) fælles dræn2 N-kanal (dobbelt) fælles kilde2 N-kanal (dobbelt) matchende par2 N-kanal (dobbelt)2 N-kanal (dobbelt), Schottky2 N-kanal (fasetrin)2 N-kanal (halvbro)2 N-kanal (kaskode)
Ryd
FET-funktionalitet
-GaNFET (galliumnitrid)Logikniveau-gateLogikniveau-gate, 0,9V drevLogikniveau-gate, 1,2V drevLogikniveau-gate, 1,5V drevLogikniveau-gate, 1,8V drevLogikniveau-gate, 2,5V drevLogikniveau-gate, 4,5V drevLogikniveau-gate, 4V drevLogikniveau-gate, 5V drevLogikniveau-port, drives af 10VSiliciumcarbid (SiC)
Ryd
Afladning til kildespænding (Vdss)
5,5V8V10V10,6V12V12V, 20V15V16V20V20V, 12V20V, 8V22V24V
Ryd
Strøm - Kontinuerlig afladning (Id) @ 25°C
12mA, 3mA30mA40mA40mA, 16mA50mA (Ta)50mA80mA100mA (Ta)100mA100mA, 200mA100mA, 5,5A115mA (Ta)115mA (Ta), 130mA (Ta)
Ryd
Rds on (maks.) @ Id, Vgs
0,8mOhm @ 1200A, 10V0,95mOhm @ 30A, 10V0,95mOhm @ 8A, 4,5V1mOhm @ 38A, 10V1,25mOhm @ 35A, 10V1,3mOhm @ 100A, 10V1,5mOhm @ 33A, 10V1,6mOhm @ 10A, 4,5V1,6mOhm @ 40A, 10V1,66mOhm @ 80A, 10V1,73mOhm @ 760A, 15V1,8mOhm @ 30A, 10V, 5mOhm @ 17,5A, 10V1,8mOhm @ 5A, 4,5V
Ryd
Vgs(th) (maks.) @ Id
10mV @ 10µA10mV @ 1µA10mV @ 20µA20mV @ 10µA20mV @ 1µA20mV @ 20µA180mV @ 1µA220mV @ 1µA360mV @ 1µA380mV @ 1µA400mV @ 250µA (min.)420mV @ 1µA450mV @ 100µA (min.)
Ryd
Gate-ladning (Qg) (maks.) @ Vgs
0,1pC @ 4,5V, 0,7pC @ 4,5V0,4pC @ 4,5V, 7,3nC @ 4,5V0,45pC @ 4,5V0,16nC @ 5V, 0,044nC @ 5V0,22nC @ 5V, 0,044nC @ 5V0,26nC @ 2,5V0,3nC @ 4,5V0,304nC @ 4,5V0,31nC @ 4,5V0,32nC @ 4,5V0,34nC @ 4,5V0,35nC @ 4,5V0,35nC @ 5V
Ryd
Inputkapacitans (Ciss) (maks.) @ Vds
2,5pF @ 5V3pF @ 5V5pF @ 3V6pF @ 3V6,2pF @ 10V6,6pF @ 10V7pF @ 10V7pF @ 3V7,1pF @ 10V7,4pF @ 10V7,5pF @ 10V8,5pF @ 3V9pF @ 15V
Ryd
Effekt - Maks.
10mW (Tc)10mW20mW (Tc)20mW50mW120mW125mW (Ta)125mW140mW150mW (Ta)150mW180mW200mW (Ta)
Ryd
Driftstemperatur
-65°C – 150°C (TJ)-55°C – 125°C-55°C – 150°C (TA)-55°C – 150°C (TJ)-55°C – 150°C-55°C – 155°C (TJ)-55°C – 175°C (TA)-55°C – 175°C (TJ)-55°C – 175°C-50°C – 150°C (TJ)-40°C – 125°C (Tc)-40°C – 150°C (TJ)-40°C – 175°C (TJ)
Ryd
Monteringstype
-ChassismonteringHulmonteringOverflademonteringOverflademontering, Fugtbar side
Ryd
Pakke/hus
4-SMD, ingen leder4-UFBGA, WLBGA4-UFBGA, WLCSP4-VDFN4-VFDFN udækket hjørne4-XBGA, 4-FCBGA4-XDFN4-XFBGA4-XFBGA, FCBGA4-XFBGA, WLBGA4-XFBGA, WLCSP4-XFLGA4-XFLGA, CSP
Ryd
Leverandørs enhedspakning
4-AlphaDFN (0,97x0,97)4-AlphaDFN (1,2x1,2)4-BGA (1x1)4-DFN (1,5x1,5)4-DFN (1,7x1,7)4-EFCP (1,01x1,01)4-EFLIP-LGA (1,11x1,11)4-EFLIP-LGA (1,4x1,4)4-EFLIP-LGA (1,62x1,62)4-FlipChip4-Picostar (1,31x1,31)4-QFN (2x2)4-WLCSP (1,26x1,26)
Ryd
Lagermuligheder
Medier
Miljømuligheder
MARKEDSPLADSPRODUKT
Resultater pr. side
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Sammenlign
Mfr varenr.
Pris
Lager
Leverandør
Mfr
Min. antal
DK vare #
Serie
Pakke
Delstatus
FET-type
FET-funktionalitet
Afladning til kildespænding (Vdss)
Strøm - Kontinuerlig afladning (Id) @ 25°C
Rds on (maks.) @ Id, Vgs
Vgs(th) (maks.) @ Id
Gate-ladning (Qg) (maks.) @ Vgs
Inputkapacitans (Ciss) (maks.) @ Vds
Effekt - Maks.
Driftstemperatur
Monteringstype
Pakke/hus
Leverandørs enhedspakning
eGaN Series
EPC2106
GANFET TRANS SYM 100V BUMPED DIE
11,96000 kr.
38.000 - Omgående
EPCEPC
1
917-1110-2-ND
917-1110-1-ND
917-1110-6-ND
eGaN®
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 N-kanal (halvbro)GaNFET (galliumnitrid)100V1,7A70mOhm @ 2A, 5V2,5V @ 600µA0,73nC @ 5V75pF @ 50V--40°C – 150°C (TJ)OverflademonteringChipChip
eGaN Series
EPC2110
GANFET 2NCH 120V 3.4A DIE
15,57000 kr.
21.385 - Omgående
EPCEPC
1
917-1152-2-ND
917-1152-1-ND
917-1152-6-ND
eGaN®
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 N-kanal (dobbelt) fælles kildeGaNFET (galliumnitrid)120V3,4A60mOhm @ 4A, 5V2,5V @ 700µA0,8nC @ 5V80pF @ 60V--40°C – 150°C (TJ)-ChipChip
eGaN Series
EPC2104
GAN TRANS SYMMETRICAL HALF BRIDG
47,11000 kr.
1.158 - Omgående
EPCEPC
1
917-1184-2-ND
917-1184-1-ND
917-1184-6-ND
eGaN®
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 N-kanal (halvbro)GaNFET (galliumnitrid)100V23A6,3mOhm @ 20A, 5V2,5V @ 5,5mA7nC @ 5V800pF @ 50V--40°C – 150°C (TJ)OverflademonteringChipChip
eGaN Series
EPC2102
GAN TRANS SYMMETRICAL HALF BRIDG
52,63000 kr.
1.848 - Omgående
EPCEPC
1
917-1182-2-ND
917-1182-1-ND
917-1182-6-ND
eGaN®
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 N-kanal (halvbro)GaNFET (galliumnitrid)60V23A4,4mOhm @ 20A, 5V2,5V @ 7mA6,8nC @ 5V830pF @ 30V--40°C – 150°C (TJ)OverflademonteringChipChip
BSM300D12P2E001
BSM300D12P2E001
MOSFET 2N-CH 1200V 300A
4.667,66000 kr.
28 - Omgående
Rohm SemiconductorRohm Semiconductor
1
BSM300D12P2E001-ND
-
Bakke
Aktiv2 N-kanal (halvbro)Siliciumcarbid (SiC)1200V (1,2kV)300A (Tc)-4V @ 68mA-35000pF @ 10V1875W-40°C – 150°C (TJ)ChassismonteringModulModul
SOT-353
DMN32D2LDF-7
MOSFET 2N-CH 30V 0.4A SOT353
2,69000 kr.
91.451 - Omgående
Diodes IncorporatedDiodes Incorporated
1
DMN32D2LDF-7DITR-ND
DMN32D2LDF-7DICT-ND
DMN32D2LDF-7DIDKR-ND
-
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 N-kanal (dobbelt) fælles kildeLogikniveau-gate30V400mA1,2Ohm @ 100mA, 4V1,2V @ 250µA-39pF @ 3V280mW-55°C – 150°C (TJ)Overflademontering5-TSSOP, SC-70-5, SOT-353SOT-353
SOT363
BSS138BKS,115
MOSFET 2N-CH 60V 0.32A 6TSSOP
3,29000 kr.
0 - Omgående
Nexperia USA Inc.Nexperia USA Inc.
1
1727-6478-2-ND
1727-6478-1-ND
1727-6478-6-ND
Automotive, AEC-Q101, TrenchMOS™
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 N-kanal (dobbelt)Logikniveau-gate60V320mA1,6Ohm @ 320mA, 10V1,6V @ 250µA0,7nC @ 4,5V56pF @ 10V445mW-55°C – 150°C (TJ)Overflademontering6-TSSOP, SC-88, SOT-3636-TSSOP
SOT363
NX3008PBKS,115
MOSFET 2P-CH 30V 0.2A 6TSSOP
3,42000 kr.
4.182 - Omgående
Nexperia USA Inc.Nexperia USA Inc.
1
1727-1282-2-ND
1727-1282-1-ND
1727-1282-6-ND
Automotive, AEC-Q101, TrenchMOS™
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 P-kanal (dobbelt)Logikniveau-gate30V200mA4,1Ohm @ 200mA, 4,5V1,1V @ 250µA0,75nC @ 4,5V46pF @ 15V445mW-55°C – 150°C (TJ)Overflademontering6-TSSOP, SC-88, SOT-3636-TSSOP
SOT363
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
3,02000 kr.
92.785 - Omgående
Nexperia USA Inc.Nexperia USA Inc.
1
1727-3126-2-ND
1727-3126-1-ND
1727-3126-6-ND
TrenchMOS™
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 N-kanal (dobbelt)Logikniveau-gate20V860mA350mOhm @ 200mA, 4,5V1,5V @ 250µA0,72nC @ 4,5V34pF @ 20V410mW-55°C – 150°C (TJ)Overflademontering6-TSSOP, SC-88, SOT-3636-TSSOP
8-SO
DMP3085LSD-13
MOSFET 2P-CH 30V 3.9A 8SO
2,63000 kr.
63.830 - Omgående
Diodes IncorporatedDiodes Incorporated
1
DMP3085LSD-13DITR-ND
DMP3085LSD-13DICT-ND
DMP3085LSD-13DIDKR-ND
-
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 P-kanal (dobbelt)Logikniveau-gate30V3,9A70mOhm @ 5,3A, 10V3V @ 250µA11nC @ 10V563pF @ 25V1,1W-55°C – 150°C (TJ)Overflademontering8-SOIC (0,154", 3,90mm bredde)8-SO
SOT-963
DMC31D5UDJ-7
MOSFET N/P-CH 30V SOT963
3,02000 kr.
23.266 - Omgående
770.000 - Fabrik
Diodes IncorporatedDiodes Incorporated
1
DMC31D5UDJ-7DITR-ND
DMC31D5UDJ-7DICT-ND
DMC31D5UDJ-7DIDKR-ND
-
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
AktivN- og P-kanalLogikniveau-gate30V220mA, 200mA1,5Ohm @ 100mA, 4,5V1V @ 250µA0,38nC @ 4,5V22,6pF @ 15V350mW-55°C – 150°C (TJ)OverflademonteringSOT-963SOT-963
U-DFN2020-6
DMN1029UFDB-7
MOSFET 2N-CH 12V 5.6A 6UDFN
3,29000 kr.
50.369 - Omgående
Diodes IncorporatedDiodes Incorporated
1
DMN1029UFDB-7DITR-ND
DMN1029UFDB-7DICT-ND
DMN1029UFDB-7DIDKR-ND
-
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 N-kanal (dobbelt)Standard12V5,6A29mOhm @ 5A, 4,5V1V @ 250µA19,6nC @ 8V914pF @ 6V1,4W-55°C – 150°C (TJ)Overflademontering6-UDFN udækket hjørneU-DFN2020-6 (Type B)
UF6
SSM6L40TU,LF
X34 PB-F UF6 S-MOS (LF) TRANSIST
3,35000 kr.
0 - Omgående
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
1
SSM6L40TULFTR-ND
SSM6L40TULFCT-ND
SSM6L40TULFDKR-ND
-
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
AktivN- og P-kanalLogikniveau-gate, 4V drev30V1,6A (Ta), 1,4A (Ta)122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V2,6V @ 1mA, 2V @ 1mA5,1nC @ 10V, 2,9nC @ 10V180pF @ 15V, 120pF @ 15V500mW (Ta)150°COverflademontering6-SMD, flade ledereUF6
SOT-563
2N7002V
MOSFET 2N-CH 60V 280MA SOT563F
3,15000 kr.
88.076 - Omgående
onsemionsemi
1
2N7002VTR-ND
2N7002VCT-ND
2N7002VDKR-ND
-
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 N-kanal (dobbelt)Logikniveau-gate60V280mA7,5Ohm @ 50mA, 5V2,5V @ 250µA-50pF @ 25V250mW-55°C – 150°C (TJ)OverflademonteringSOT-563, SOT-666SOT-563F
8-SO
DMG9926USD-13
MOSFET 2N-CH 20V 8A SOP8L
3,35000 kr.
229 - Omgående
Diodes IncorporatedDiodes Incorporated
1
DMG9926USD-13DITR-ND
DMG9926USD-13DICT-ND
DMG9926USD-13DIDKR-ND
-
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 N-kanal (dobbelt)Logikniveau-gate20V8A24mOhm @ 8,2A, 4,5V900mV @ 250µA8,8nC @ 4,5V867pF @ 15V1,3W-55°C – 150°C (TJ)Overflademontering8-SOIC (0,154", 3,90mm bredde)8-SO
Pkg 5880
SI1025X-T1-GE3
MOSFET 2P-CH 60V 0.19A SC-89
3,48000 kr.
660 - Omgående
Vishay SiliconixVishay Siliconix
1
SI1025X-T1-GE3TR-ND
SI1025X-T1-GE3CT-ND
SI1025X-T1-GE3DKR-ND
TrenchFET®
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 P-kanal (dobbelt)Logikniveau-gate60V190mA4Ohm @ 500mA, 10V3V @ 250µA1,7nC @ 15V23pF @ 25V250mW-55°C – 150°C (TJ)OverflademonteringSOT-563, SOT-666SC-89 (SOT-563F)
SOT 26
DMG9926UDM-7
MOSFET 2N-CH 20V 4.2A SOT-26
3,68000 kr.
22.139 - Omgående
Diodes IncorporatedDiodes Incorporated
1
DMG9926UDMDITR-ND
DMG9926UDMDICT-ND
DMG9926UDMDIDKR-ND
-
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 N-kanal (dobbelt) fælles drænLogikniveau-gate20V4,2A28mOhm @ 8,2A, 4,5V900mV @ 250µA8,3nC @ 4,5V856pF @ 10V980mW-55°C – 150°C (TJ)OverflademonteringSOT-23-6SOT-26
SC-70-6
SI1900DL-T1-E3
MOSFET 2N-CH 30V 0.59A SC70-6
4,14000 kr.
17.499 - Omgående
Vishay SiliconixVishay Siliconix
1
SI1900DL-T1-E3TR-ND
SI1900DL-T1-E3CT-ND
SI1900DL-T1-E3DKR-ND
TrenchFET®
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 N-kanal (dobbelt)Logikniveau-gate30V590mA480mOhm @ 590mA, 10V3V @ 250µA1,4nC @ 10V-270mW-55°C – 150°C (TJ)Overflademontering6-TSSOP, SC-88, SOT-363SC-70-6
TUMT6_TUMT6 Pkg
US6M2TR
MOSFET N/P-CH 30V/20V TUMT6
4,66000 kr.
18.912 - Omgående
Rohm SemiconductorRohm Semiconductor
1
US6M2TR-ND
US6M2CT-ND
US6M2DKR-ND
-
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
AktivN- og P-kanalStandard30V, 20V1,5A, 1A240mOhm @ 1,5A, 4,5V1,5V @ 1mA2,2nC @ 4,5V80pF @ 10V1W150°C (TJ)Overflademontering6-SMD, flade ledereTUMT6
8-SOIC
SI9933CDY-T1-GE3
MOSFET 2P-CH 20V 4A 8-SOIC
4,34000 kr.
1.918 - Omgående
Vishay SiliconixVishay Siliconix
1
SI9933CDY-T1-GE3TR-ND
SI9933CDY-T1-GE3CT-ND
SI9933CDY-T1-GE3DKR-ND
TrenchFET®
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 P-kanal (dobbelt)Logikniveau-gate20V4A58mOhm @ 4,8A, 4,5V1,4V @ 250µA26nC @ 10V665pF @ 10V3,1W-50°C – 150°C (TJ)Overflademontering8-SOIC (0,154", 3,90mm bredde)8-SOIC
8-SOIC
AOSD21311C
MOSFET 2P-CH 8-SOIC
4,66000 kr.
51.080 - Omgående
Alpha & Omega Semiconductor Inc.Alpha & Omega Semiconductor Inc.
1
785-AOSD21311CTR-ND
785-AOSD21311CCT-ND
785-AOSD21311CDKR-ND
-
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 P-kanal (dobbelt)Standard30V5A (Ta)42mOhm @ 5A, 10V2,2V @ 250µA23nC @ 10V720pF @ 15V1,7W-55°C – 150°C (TJ)Overflademontering8-SOIC (0,154", 3,90mm bredde)8-SOIC
SOT-963
NTUD3174NZT5G
MOSFET 2N-CH 20V 220MA SOT963
4,40000 kr.
29.759 - Omgående
onsemionsemi
1
NTUD3174NZT5GOSTR-ND
NTUD3174NZT5GOSCT-ND
NTUD3174NZT5GOSDKR-ND
-
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 N-kanal (dobbelt)Standard20V220mA (Ta)1,5Ohm @ 100mA, 4,5V1V @ 100µA-12,5pF @ 15V125mW (Ta)-55°C – 150°C (TJ)OverflademonteringSOT-963SOT-963
8-SOIC
AO4840
MOSFET 2N-CH 40V 6A 8-SOIC
4,86000 kr.
55.558 - Omgående
Alpha & Omega Semiconductor Inc.Alpha & Omega Semiconductor Inc.
1
785-1063-2-ND
785-1063-1-ND
785-1063-6-ND
-
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Ikke til nye design2 N-kanal (dobbelt)Logikniveau-gate40V6A30mOhm @ 6A, 10V3V @ 250µA10,8nC @ 10V650pF @ 20V2W-55°C – 150°C (TJ)Overflademontering8-SOIC (0,154", 3,90mm bredde)8-SOIC
8-SOIC
AO4882
MOSFET 2N-CH 40V 8A 8SOIC
5,26000 kr.
222.380 - Omgående
Alpha & Omega Semiconductor Inc.Alpha & Omega Semiconductor Inc.
1
785-1317-2-ND
785-1317-1-ND
785-1317-6-ND
-
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 N-kanal (dobbelt)Logikniveau-gate40V8A19mOhm @ 8A, 10V2,4V @ 250µA12nC @ 10V415pF @ 20V2W-55°C – 150°C (TJ)Overflademontering8-SOIC (0,154", 3,90mm bredde)8-SOIC
FDMAxxxxxZ
FDMA3023PZ
MOSFET 2P-CH 30V 2.9A 6MICROFET
4,80000 kr.
6.280 - Omgående
18.000 - Fabrik
onsemionsemi
1
FDMA3023PZTR-ND
FDMA3023PZCT-ND
FDMA3023PZDKR-ND
PowerTrench®
Tape & Reel (TR)
Afskåret tape (CT)
Digi-Reel®
Aktiv2 P-kanal (dobbelt)Logikniveau-gate30V2,9A90mOhm @ 2,9A, 4,5V1V @ 250µA11nC @ 4,5V530pF @ 15V700mW-55°C – 150°C (TJ)Overflademontering6-VDFN udækket hjørne6-MicroFET (2x2)
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