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600 V Power Schottky Silicon Carbide Diode

STMicroelectronics STPSC2H12D

Supplier: STMicroelectronics

Subtitle: Silicon Carbide Schottky Diode
Description: The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn off and ringing patte...

Category: Semiconductors, Development ToolsDiscrete SemiconductorsDiodes, RectifiersDiodes - SingleSilicon Carbide Schottky