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Texas Instruments
Quad Schottky Diode Array
Toshiba Semiconductor and Storage
Silicon Epitaxial Schottky Barrier Diode
 
Vishay Semiconductor Diodes Division
Schottky Diode Array

Silicon Epitaxial Schottky Barrier Diode

Schottky Barrier Diode

Toshiba Semiconductor and Storage

A Schottky barrier diode is an element with a junction of a semiconductor and a metal such as molybdenum in place of P-N junction. Unlike P-N junctioned diodes, it is activated by majority carriers. It is suitable for high-speed switching because the forward voltage is low and the reverse recovery time is short.

Features
  • Low forward voltage
  • Low reverse current
  • Small package
Specifications
  • Current - Average Rectified (Io) (per Diode):70mA ~ 10A (DC)
  • Current - Reverse Leakage @ Vr:2µA ~ 90µA
  • Current Coupled to Voltage - Forward (Vf) (Max) @ If:10mA ~ 10A
  • Diode Configuration:1 Pair Common Anode ~ 2 Independent
  • Diode Type:Schottky
  • Reverse Recovery Time (trr):1.5ns
  • Voltage - DC Reverse (Vr) (Max):30V ~ 650V
  • Voltage - Forward (Vf) (Max) @ If:360mV ~ 1.7V
  • Voltage Coupled to Current - Reverse Leakage @ Vr:25V ~ 650V
Parts

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TBAT54C,LMTBAT54C,LMDIODE SCHOTTKY 30V 140MA SOT23 1 Pair Common CathodeSchottky30V140mATO-236-3, SC-59, SOT-23-3RoHS
TBAT54A,LMTBAT54A,LMDIODE SCHOTTKY 30V 100MA SOT23 1 Pair Common AnodeSchottky30V100mATO-236-3, SC-59, SOT-23-3RoHS
1SS393,LF1SS393,LFDIODE SCHOTTKY 40V 100MA SC70 1 Pair Common CathodeSchottky40V100mASC-70, SOT-323RoHS
1SS396,LF1SS396,LFDIODE SCHOTKY 40V 70MA SMINI 1 Pair Series ConnectionSchottky40V70mATO-236-3, SC-59, SOT-23-3RoHS
TRS20N65D,S1FTRS20N65D,S1FDIODE ARRAY SCHOTTKY 650V TO247 1 Pair Common CathodeSchottky650V10A (DC)TO-247-3RoHS
CVJ10F30,LFCVJ10F30,LFX34 SMALL-SIGNAL SCHOTTKY BARRIE2 IndependentSchottky30V1A6-SMD (5 Leads), Flat LeadRoHS

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